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TPS25940 Datasheet(PDF) 26 Page - Texas Instruments

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Part # TPS25940
Description  2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection
PDF  50 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS25940 Datasheet(HTML) 26 Page - Texas Instruments

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(IMON)
-6
5
R
19.23 k
5 x 52 x 10
=
=
W
(IMONmax)
(IMON)
-6
(LIM)
V
R
k
I
x 52 x 10
=
W
26
TPS25940-Q1
SLVSDJ0C – MAY 2016 – REVISED JULY 2018
www.ti.com
Product Folder Links: TPS25940-Q1
Submit Documentation Feedback
Copyright © 2016–2018, Texas Instruments Incorporated
From the device electrical specifications, V(OVPR) = 0.99 V and V(ENR) = 0.99 V. For design requirements, V(OV) is
16.5 V and V(UV) is 10.8 V. To solve the equation, first choose the value of R3 = 31.2 kΩ and use Equation 10 to
solve for (R1 + R2) = 488.8 kΩ. Use Equation 11 and value of (R1 + R2) to solve for R2 = 16.47 kΩ and finally R1=
472.33 kΩ.
Using the closest standard 1% resistor values gives R1 = 475 kΩ, R2 = 16.7 kΩ, and R3 = 31.2 kΩ.
The power failure threshold is detected on the falling edge of supply. This threshold voltage is 7% lower than the
rising threshold, V(UV). This is calculated using Equation 12.
V(PFAIL) = 0.93 x V(UV)
(12)
9.2.2.4 Programming Current Monitoring Resistor—RIMON
Voltage at IMON pin V(IMON) represents the voltage proportional to load current. This can be connected to an
ADC of the downstream system for health monitoring of the system. The R(IMON) need to be configured based on
the maximum input voltage range of the ADC used. R(IMON) is set using Equation 13.
(13)
For I(LIM) = 5 A, and considering the operating range of ADC from 0 V to 5 V, V(IMONmax) is 5 V and R(IMON) is
determined by:
(14)
Selecting R(IMON) value less than determined by Equation 14 ensures that ADC limits are not exceeded for
maximum value of load current.
If the IMON pin voltage is not being digitized with an ADC, R(IMON) can be selected to produce a 1V/1A voltage at
the IMON pin, using Equation 13.
Choose closest 1 % standard value: 19.1 kΩ.
If current monitoring up to I(FASTRIP) is desired, R(IMON) can be reduced by a factor of 1.6, as in Equation 5.
9.2.2.5 Setting Output Voltage Ramp Time (tdVdT)
For a successful design, the junction temperature of device must be kept below the absolute-maximum rating
during both dynamic (start-up) and steady state conditions. Dynamic power stresses often are an order of
magnitude greater than the static stresses, so it is important to determine the right start-up time and in-rush
current limit required with system capacitance to avoid thermal shutdown during start-up with and without load.
The ramp-up capacitor C(dVdT) needed is calculated considering the two possible cases Case1: Start-up Without
Load: Only Output Capacitance C(OUT) Draws Current During Start-up and Case 2: Start-Up With Load: Output
Capacitance C(OUT) and Load Draws Current During Start-Up.
9.2.2.5.1
Case1: Start-up Without Load: Only Output Capacitance C(OUT) Draws Current During Start-up
During start-up, as the output capacitor charges, the voltage difference across the internal FET decreases, and
the power dissipated decreases as well. Typical ramp-up of output voltage V(OUT) with inrush current limit of 1.2 A
and power dissipated in the device during start-up is shown in Figure 52. The average power dissipated in the
device during start-up is equal to area of triangular plot (red curve in Figure 52) averaged over tdVdT.



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