TPS25940 datasheet(6/50 Pages) TI1

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TPS25940-Q1

SLVSDJ0C – MAY 2016 – REVISED JULY 2018

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Electrical Characteristics (continued)

–40°C

≤ TJ = TA ≤ 125°C, 2.7 V ≤ V(IN) = 18 V, V(EN/UVLO) = 2 V, V(OVP) = V(DEVSLP) = V(PGTH) = 0 V, R(ILIM) = 150 kΩ, C(OUT) = 1

µF, C(dVdT) = OPEN, PGOOD = FLT = IMON = OPEN. Positive current into terminals. All voltages referenced to GND (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

(2)

Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account

separately.

V(ILIM)

ILIM bias voltage

0.87

I(LIM)

Current limit(2)

R(ILIM) = 150 kΩ, (V(IN) – V(OUT)) = 1 V

0.53

0.58

0.63

R(ILIM) = 88.7 kΩ, (V(IN) – V(OUT)) = 1 V

0.9

0.99

1.07

R(ILIM) = 42.2 kΩ, (V(IN) – V(OUT)) = 1 V

1.92

2.08

2.25

R(ILIM) = 20 kΩ, (V(IN) – V(OUT)) = 1 V

4.09

4.45

4.81

R(ILIM) = 16.9 kΩ, (V(IN) – V(OUT)) = 1 V

4.78

5.2

5.62

R(ILIM) = OPEN, Open resistor current limit (single point

failure test: UL60950)

0.35

0.45

0.55

R(ILIM) = SHORT, Shorted resistor current limit (single

point failure test: UL60950)

0.55

0.67

0.8

I(DEVSLP(LIM))

DevSleep mode current limit

0.55

0.67

0.8

IOS

Short-circuit current limit (2)

R(ILIM) = 42.2 kΩ, V(VIN) = 12 V, (V(IN) – V(OUT)) = 5 V

1.91

2.07

2.24

R(ILIM) = 20 kΩ, V(VIN) = 12 V, (V(IN) – V(OUT)) = 5 V

4.4

4.7

R(ILIM) = 16.9 kΩ, V(VIN) = 12 V, (V(IN) – V(OUT)) = 5 V

4.7

5.11

5.52

I(FASTRIP)

Fast-trip comparator threshold(1)(2)

1.5 x

I(LIM) +

0.375

CURRENT MONITOR OUTPUT (IMON)

GAIN(IMON)

Gain factor I(IMON):I(OUT)

1 A

≤ I(OUT) ≤ 5 A

47.78

52.3

57.23

µA/A

MOSFET – POWER SWITCH

RON

IN to OUT - ON resistance

1 A

≤ I(OUT) ≤ 5 A, TJ = 25°C

mΩ

1 A

≤ I(OUT) ≤ 5 A, –40°C ≤ TJ ≤ +85°C

1 A

≤ I(OUT) ≤ 5 A, –40°C ≤ TJ ≤ +125°C

PASS FET OUTPUT (OUT)

Ilkg(OUT)

OUT leakage current in off state

V(IN) = 18 V, V(EN/UVLO) = 0 V, V(OUT) = 0 V (sourcing)

–2

µA

V(IN) = 2.7 V, V(EN/UVLO) = 0 V, V(OUT) = 18 V (sinking)

V(REVTH)

V(IN) – V(OUT) threshold for reverse

protection comparator, falling

–77

–66

–55

V(FWDTH)

V(IN) – V(OUT) threshold for reverse

protection comparator, rising

100

114

FAULT FLAG (FLT): ACTIVE LOW

R(FLT)

FLT internal pull-down resistance

V(OVP) = 2 V, I(FLT) = 5 mA sinking

I(FLT)

FLT input leakage current

0 V

≤ V(FLT) ≤ 18 V

–1

µA

POSITIVE INPUT for POWER-GOOD COMPARATOR (PGTH)

V(PGTHR)

PGTH threshold voltage, rising

0.97

0.99

1.01

V(PGTHF)

PGTH threshold voltage, falling

0.9

0.92

0.94

I(PGTH)

PGTH input leakage current

0 V

≤ V(PGTH) ≤ 18 V

–100

100

POWER-GOOD COMPARATOR OUTPUT (PGOOD): ACTIVE HIGH

R(PGOOD)

PGOOD internal pull-down

resistance

V(PGTH) = 0V, I(PGOOD) = 5 mA sinking

I(PGOOD)

PGOOD input leakage current

0 V

≤ V(PGOOD) ≤ 18 V

–1

µA

THERMAL SHUT DOWN (TSD)

T(TSD)

TSD threshold(1)

160

°C

T(TSDhys)

TSD hysteresis(1)

°C

Thermal fault response

TPS25940-Q1

Auto-retry

TPS25940L-Q1

Latch-off

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