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TPS25940-Q1

SLVSDJ0C – MAY 2016 – REVISED JULY 2018

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Copyright © 2016–2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Assumes 15 K power-on-hours at 100% duty cycle. This information is provided solely for your convenience and does not extend or

modify the warranty provided under TI's standard terms and conditions for TI's semiconductor products.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Input voltage

IN, OUT, PGTH, PGOOD, EN/UVLO, OVP, DEVSLP, FLT

–0.3

20

V

IN, OUT (10 ms transient)

22

dVdT, ILIM

–0.3

3.6

IMON

–0.3

7

Sink current

PGOOD, FLT, dVdT

10

mA

Maximum continuous switch current,

(2)

4.78

A

Source current

dVdT, ILIM, IMON

Internally Limited

Continuous power dissipation

See the Thermal Information table

Maximum junction temperature

–40

150

°C

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±3000

V

Charged-device model (CDM), per AEC Q100-011

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM MAX

UNIT

IN

Input voltage

2.7

18

V

EN/UVLO, OVP, DEVSLP, OUT,

PGTH, PGOOD, FLT

0

18

dVdT, ILIM

0

3

IMON

0

6

ILIM

Resistance

16.9

150

kΩ

IMON

1

OUT

External capacitance

0.1

µF

dVdT

470

nF

Operating junction temperature

–40

25

125

°C