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PC8374T Datasheet(PDF) 23 Page - National Semiconductor (TI) |
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PC8374T Datasheet(HTML) 23 Page - National Semiconductor (TI) |
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23 / 48 page ![]() 2.0 Device Characteristics (Continued) Revision 1.1 23 www.national.com 2.2.2 Input, TTL Compatible, with Schmitt Trigger Symbol: INTS 2.2.3 Input, TTL Compatible, with 200 mV Schmitt Trigger Symbol: INTS2 2.2.4 Input, TTL Compatible, with 400 mV Schmitt Trigger Symbol: INTS4 Symbol Parameter Conditions Min Max Unit VIH Input High Voltage 2.0 5.51 1. Not tested. Guaranteed by design. V VIL Input Low Voltage −0.51 0.8 V VHY Input Hysteresis 2502 2. Not tested. Guaranteed by characterization. mV IIL 3 3. Input leakage current includes the output leakage of the bi-directional buffers with TRI-STATE outputs. Input Leakage Current 0 < VIN < VSUP 4 4. VSUP is VDD3 or VSB3 according to the input power well. ±1 µA Symbol Parameter Conditions Min Max Unit VIH Input High Voltage 2.0 5.51 1. Not tested. Guaranteed by design. V VIL Input Low Voltage −0.51 0.8 V VHY Input Hysteresis 2002 2. Not tested. Guaranteed by characterization. mV IIL 3 3. Input leakage current includes the output leakage of the bi-directional buffers with TRI-STATE outputs. Input Leakage Current 0 < VIN < VSUP 4 4. VSUP is VDD3 or VSB3 according to the input power well. ±1 µA Symbol Parameter Conditions Min Max Unit VIH Input High Voltage 2.0 5.51 1. Not tested. Guaranteed by design. V VIL Input Low Voltage −0.51 0.8 V VHY Input Hysteresis 4002 2. Not tested. Guaranteed by characterization. mV IIL 3 3. Input leakage current includes the output leakage of the bi-directional buffers with TRI-STATE outputs. Input Leakage Current 0 < VIN < VSUP 4 4. VSUP is VDD3 or VSB3 according to the input power well. ±1 µA |
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