RX113 datasheet(121/131 Pages) RENESAS

121 / 131 page

R01DS0216EJ0120 Rev.1.20

Page 121 of 131

Sep 07, 2020

RX113 Group

5. Electrical Characteristics

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below

4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

Note:

The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.

Table 5.62

ROM (Flash Memory for Code Storage) Characteristics (3)

Middle-speed operating mode Conditions: 1.8 V

≤ VCC ≤ 3.6 V, 1.8 V ≤ AVCC0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V

Temperature range for the programming/erasure operation: Ta = –40 to +85°C

Item

Symbol

FCLK = 1 MHz

FCLK = 8 MHz

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

4-byte

tP4

—

143

1330

—

96.8

932

µs

Erasure time

1-Kbyte

tE1K

—

8.3

269

—

5.85

219

256-Kbyte

tE256K

—

407

928

—

520

Blank check time

4-byte

tBC4

——

µs

1-Kbyte

tBC1K

—

1.61

—

0.369

Erase operation forcible stop time

tSED

—

33.6

—

25.6

µs

Start-up area switching setting time

tSAS

—

13.2

549

—

7.6

445

Access window time

tAWS

—

13.2

549

—

7.6

445

ROM mode transition wait time 1

tDIS

2—

—2—

—

µs

ROM mode transition wait time 2

tMS

3—

—3—

—

µs

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