RX113 datasheet(122/131 Pages) RENESAS

122 / 131 page

R01DS0216EJ0120 Rev.1.20

Page 122 of 131

Sep 07, 2020

RX113 Group

5. Electrical Characteristics

5.14

E2 DataFlash Characteristics

Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),

erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1000 times for different

addresses in 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasing is not enabled (overwriting is prohibited).

Note 2. Characteristic when using the flash memory programmer and the self-programming library provided from Renesas Electronics.

Note 3. These results are obtained from reliability testing.

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below

4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

Note:

The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below

4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

Note:

The frequency accuracy of FCLK should be ±3.5%. Confirm the frequency accuracy of the clock source.

Table 5.63

E2 DataFlash Characteristics (1)

Item

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reprogramming/erasure cycle*1

NDPEC

100000

1000000

—

Times

Data hold time

After 10000 times of NDPEC

tDDRP

20*2, *3

—

Year

Ta = +85°C

After 100000 times of NDPEC

5*2, *3

—

Year

After 1000000 times of NDPEC

—1*2, *3

—

Year

Ta = +25°C

Table 5.64

E2 DataFlash Characteristics (2)

: high-speed operating mode

Conditions: 2.7 V

≤ VCC ≤ 3.6 V, 2.7 V ≤ AVCC0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V

Temperature range for the programming/erasure operation: Ta = –40 to +105°C

Item

Symbol

FCLK = 1 MHz

FCLK = 32 MHz

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

1-byte

tDP1

—

761

—

40.5

374

µs

Erasure time

1-Kbyte

tDE1K

—

17.4

456

—

6.15

228

8-Kbyte

tDE8K

—

60.4

499

—

9.3

231

Blank check time

1-byte

tDBC1

—

15.9

µs

1-Kbyte

tDBC1K

—

1.58

—

0.127

Erase operation forcible stop time

tDSED

—

21.5

—

12.8

µs

DataFlash STOP recovery time

tDSTOP

5—

—5—

—

µs

Table 5.65

E2 DataFlash Characteristics (3)

: middle-speed operating mode

Conditions: 1.8 V

≤ VCC ≤ 3.6 V, 1.8 V ≤ AVCC0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V

Temperature range for the programming/erasure operation: Ta = –40 to +85°C

Item

Symbol

FCLK = 1 MHz

FCLK = 8 MHz

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

1-byte

tDP1

—

126

1160

—

85.4

818

µs

Erasure time

1-Kbyte

tDE1K

—

17.5

457

—

7.76

259

8-Kbyte

tDE8K

—

60.5

500

—

16.7

267.6

Blank check time

1-byte

tDBC1

——

µs

1-Kbyte

tDBC1K

—

1.61

—

0.369

Erase operation forcible stop time

tDSED

—

33.5

—

25.5

µs

DataFlash STOP recovery time

tDSTOP

720

—

720

—

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