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PT2000 Datasheet(PDF) 17 Page - NXP Semiconductors |
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PT2000 Datasheet(HTML) 17 Page - NXP Semiconductors |
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17 / 148 page ![]() 17 NXP Semiconductors PT2000 5.4 Low-side (LS1-LS6) pre-driver electrical characteristics High-side pre-driver dynamic (continued) tDON_G_HSX_25 Turn on propagation delay at 25 V/ μs slew rate 100 — 200 ns (20)(21) tDOFF_G_HSX_25 Turn off propagation delay at 25 V/ μs slew rate 70 — 150 ns (20)(21) tDON_G_HSX_12.5 Turn on propagation delay at 12.5 V/ μs slew rate, 160 — 310 ns (20)(21) tDOFF_G_HSX_12.5 Turn off propagation delay at 12.5 V/ μs slew rate 90 — 170 ns (20)(21) HS pre-driver safe off RPD_HSX G_HSX to S_HSX pull-down resistor 500 — 2000 k Ω Slew rate control RDS_HSX_P (00) G_HSx pMOS RDS(on) (00) 300 V/μs 7.5 14.6 31.4 Ω RDS_HSX_N (00) G_HSx nMOS RDS(on) (00) 300 V/μs 2.5 5.9 16.5 Ω RDS_HSX_P (01) G_HSx pMOS RDS(on) (01) 50 V/μs 61 85 115 Ω RDS_HSX_N (01) G_HSx nMOS RDS(on) (01) 50 V/μs23 35 50 Ω RDS_HSX_P (10) G_HSx pMOS RDS(on) (10) 25 V/μs 122 169 230 Ω RDS_HSX_N (10) G_HSx nMOS RDS(on) (10) 25 V/μs 47 69 100 Ω RDS_HSX_P (11) G_HSx pMOS RDS(on) (11) 12.5 V/μs 245 337 460 Ω RDS_HSX_N (11) G_HSx nMOS RDS(on) (11) 12.5 V/μs 94 138 199 Ω Notes 20. Guaranteed by design. 21. 10% of output voltage change, CLOAD = 4.7 nF; RG = 40.2 Ω, VCCP = 7.0 V Table 7. Low-side pre-driver electrical characteristics Characteristics noted under conditions -40 ºC < TA < +125 ºC, referenced to ground, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Symbol Characteristic Min. Typ. Max. Unit Notes Low-side pre-driver LS1-6 VG_LSx G_LSx operating voltage 0.0 — VCCP V (22) IS_LSx_sink D_LSx leakage current (biasing switched off) •VD_LSx = 13.5 V •VD_LSx = 40 V 10 10 — — 110 320 μA fG_LSx_PWM PWM frequency • Nominal • Short period of switching during 50 μs every 1ms 0.0 0.0 — — 100 200 kHz (22) DCG_LSx Duty cycle 0.0 — 100 % (22) QG_LSx External low-side MOSFET effective gate charge •fPWM ≤ fG_LSx_PWM •fPWM ≤ 67 kHz •fPWM ≤ 50 kHz — — — 30 55 — 50 75 100 nC Notes 22. Guaranteed by design. Table 6. High-side pre-driver electrical characteristics (continued) Characteristics noted under conditions -40 ºC < TA < +125 ºC, referenced to ground, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Symbol Characteristic Min. Typ. Max. Unit Notes |
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