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PT2000 Datasheet(PDF) 17 Page - NXP Semiconductors

Part # PT2000
Description  Programmable solenoid controller
PDF  148 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PT2000 Datasheet(HTML) 17 Page - NXP Semiconductors

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17
NXP Semiconductors
PT2000
5.4
Low-side (LS1-LS6) pre-driver electrical characteristics
High-side pre-driver dynamic (continued)
tDON_G_HSX_25
Turn on propagation delay at 25 V/
μs slew rate
100
—
200
ns
(20)(21)
tDOFF_G_HSX_25
Turn off propagation delay at 25 V/
μs slew rate
70
—
150
ns
(20)(21)
tDON_G_HSX_12.5
Turn on propagation delay at 12.5 V/
μs slew rate,
160
—
310
ns
(20)(21)
tDOFF_G_HSX_12.5
Turn off propagation delay at 12.5 V/
μs slew rate
90
—
170
ns
(20)(21)
HS pre-driver safe off
RPD_HSX
G_HSX to S_HSX pull-down resistor
500
—
2000
k
Ω
Slew rate control
RDS_HSX_P (00)
G_HSx pMOS RDS(on) (00) 300 V/μs
7.5
14.6
31.4
Ω
RDS_HSX_N (00)
G_HSx nMOS RDS(on) (00) 300 V/μs
2.5
5.9
16.5
Ω
RDS_HSX_P (01)
G_HSx pMOS RDS(on) (01) 50 V/μs
61
85
115
Ω
RDS_HSX_N (01)
G_HSx nMOS RDS(on) (01) 50 V/μs23
35
50
Ω
RDS_HSX_P (10)
G_HSx pMOS RDS(on) (10) 25 V/μs
122
169
230
Ω
RDS_HSX_N (10)
G_HSx nMOS RDS(on) (10) 25 V/μs
47
69
100
Ω
RDS_HSX_P (11)
G_HSx pMOS RDS(on) (11) 12.5 V/μs
245
337
460
Ω
RDS_HSX_N (11)
G_HSx nMOS RDS(on) (11) 12.5 V/μs
94
138
199
Ω
Notes
20.
Guaranteed by design.
21.
10% of output voltage change, CLOAD = 4.7 nF; RG = 40.2 Ω, VCCP = 7.0 V
Table 7. Low-side pre-driver electrical characteristics
Characteristics noted under conditions -40 ºC < TA < +125 ºC, referenced to ground, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol
Characteristic
Min.
Typ.
Max.
Unit
Notes
Low-side pre-driver LS1-6
VG_LSx
G_LSx operating voltage
0.0
—
VCCP
V
(22)
IS_LSx_sink
D_LSx leakage current (biasing switched off)
•VD_LSx = 13.5 V
•VD_LSx = 40 V
10
10
—
—
110
320
μA
fG_LSx_PWM
PWM frequency
• Nominal
• Short period of switching during 50
μs every 1ms
0.0
0.0
—
—
100
200
kHz
(22)
DCG_LSx
Duty cycle
0.0
—
100
%
(22)
QG_LSx
External low-side MOSFET effective gate charge
•fPWM ≤ fG_LSx_PWM
•fPWM ≤ 67 kHz
•fPWM ≤ 50 kHz
—
—
—
30
55
—
50
75
100
nC
Notes
22.
Guaranteed by design.
Table 6. High-side pre-driver electrical characteristics (continued)
Characteristics noted under conditions -40 ºC < TA < +125 ºC, referenced to ground, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol
Characteristic
Min.
Typ.
Max.
Unit
Notes



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