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PT2000 Datasheet(PDF) 12 Page - NXP Semiconductors

Part # PT2000
Description  Programmable solenoid controller
PDF  148 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PT2000 Datasheet(HTML) 12 Page - NXP Semiconductors

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NXP Semiconductors
12
PT2000
VVSENSEN1/2/3
DC voltage at VSENSEN1/2/3
• Static at VCC5 < 10 V
• Dynamic for max 5.0
μs, 1.0 kHz repetition rate at VCC5, 5.25 V
• Dynamic for max 1.0
μs at VCC5 < 5.25 V
-1.0
-5.0
-15
1.0
5.0
15
V
(6)
(6)
VVSENSEP1/2/3
DC voltage at VSENSEP1/2/3
• DC voltage at VCC5 < 10 V
• Dynamic for max 5.0
μs, 1.0 kHz repetition rate at VCC5 < 5.25 V
• Dynamic for max 1.0
μs at VCC5 < 5.25 V
-2.5
-5.0
-15
2.5
5.0
15
V
(6)
(6)
VVSENSEN5/6
DC voltage at VSENSEN5/6
• DC voltage at VCC5 < 10 V
• Dynamic for max 5.0
μs, 1.0 kHz repetition rate at VCC5 < 5.25 V
• Dynamic for max 1.0
μs at VCC5 < 5.25 V
-3.0
-5.0
-15
1.0
5.0
15
V
(6)
(6)
VVSENSEP5/6
DC voltage at VSENSEP5/6
• DC voltage at VCC5 < 10 V
• Dynamic for max 5.0
μs, 1.0 kHz repetition rate at VCC5 < 5.25 V
• Dynamic for max 1.0
μs at VCC5 < 5.25 V
-4.2
-5.0
-15
2.5
5.0
15
V
(6)
(6)
ESD voltage
VESD-HBM1
VESD-HBM2
VESD-HBM3
VESD-CDM1
VESD-CDM2
ESD voltage
• Human body model (HBM)
VBOOST, VBATT, S_HSx
D_LSx
All other pins
• Machine model
Corner pins
All other pins
-4000
-8000
-2000
-750
-500
4000
8000
2000
750
500
V
(7), (8)
Thermal ratings
TA
TJ
Operating temperature
• Ambient
• Junction
-40
-40
125
150
°C
TTHRESHOLD
Temperature monitoring threshold
167
187
°C
TSTG
Storage ambient temperature
-55
150
°C
Thermal resistance
RθJA
Thermal resistance junction to ambient
25.3
°C/W
(9)
RθJCTOP
Thermal resistance junction to case top
13.2
°C/W
(10)
RθJCBOTTOM
Thermal resistance junction to case bottom
0.8
°C/W
(11)
Notes
5.
With series resistor of 3.3 k
Ω ±20% at the pin
6.
Guaranteed by design.
7.
Human body model (HBM) per JESD22-A114 - 100 pF, 1.5 k
Ω
8.
Charge device model (CDM) per JESD22-C101.
9.
Per JEDEC JESD51-6 with the board (JESD51-7) horizontal
10.
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC - 883 Method 1012.1).
11.
Thermal resistance between the die and the solder pad on the bottom of the package based on the simulation without internal resistance
Table 4. Maximum ratings (continued)
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage
to the device.
Symbol
Ratings
Min.
Max.
Unit
Notes



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