PT2000 datasheet(44/148 Pages) NXP

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NXP Semiconductors

PT2000

The high-side VDS comparator compares VDS of the high-side MOSFET, acquired through VBOOST, VBATT, and the S_HSx pins, with

the selected threshold. In actual implementation, the selected threshold voltage is subtracted to the VBOOST or VBATT voltage and

compared to the S_HSx voltage.

The high-side VSRC comparator compares the voltage across the freewheeling element, acquired through the S_HSx pins and PGND,

with the selected threshold. In actual implementation, the selected threshold voltage is added to PGND voltage and compared to the

S_HSx voltage.

6.5

Low-side pre-driver (LS1-6)

There are six general purpose low-side pre-drivers and all drive external N-Channel logic level type power MOSFETs used in low-side

configurations.

Figure 13. Low-side pre-driver block diagram

Internal to the device, a gate to source pull-down resistor RPD_LSX holds the external MOSFETs in the off state, while the device is in a

power on reset state (RSTB low).

The low-side pre-drivers are supplied by VCCP voltage. The low-side pre-driver is intended to drive the gate of an external logic level

MOSFET in low-side configuration. The logic command lsx_command, to switch the external MOSFET, is provided by the digital block.

This command is generated, taking into account the following signals:

• Logic command coming from channel logic (lsx_in).

•VCCP undervoltage signals (uv_vccp) from the VCCP UV monitor: In case of an undervoltage, the external MOSFET is switched off.

•VCC5 undervoltage signals (uv_vcc5) from VCC5 UV monitor: In case of an undervoltage the external MOSFET is switched off.

0100

2.0

0101

2.5

0110

3.0

0111

3.5

Table 23. VDS monitor threshold selection (continued)

hsx_vds/src_threshold(3:0)

Threshold voltage HS VDS / HS VSRC

LDO

Load

PGND

DRVEN

D_LSx

G_LSx

VCCP

VBAT

uv_vcc5

uv_vccp

cksys_drven

lsx_in

lsx_slewrate (1:0)

lsx_command

lsx_drven

ls6_en_ovr

MC33PT2000

PGND

RSENSE

LS Pre-driver

Rpd_lsx

other lsx

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