PT2000 datasheet(33/148 Pages) NXP

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NXP Semiconductors

PT2000

SPI MISO driver with VCCIO = 3.3 V

tR_MISO_S3.3

MISO rise time slow setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

—

tF_MISO_S3.3

MISO fall time slow setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

—

tR_MISO_F3.3

MISO rise time fast setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

1.5

2.7

4.4

—

13.4

17.1

23.9

tF_MISO_F3.3

MISO fall time fast setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

1.5

2.7

4.4

—

13.4

17.1

23.9

SPI MISO driver with VCCIO = 5.0 V

tR_MISO_S5.0

MISO rise time slow setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

9.0

—

tF_MISO_S5.0

MISO fall time slow setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

9.0

—

tR_MISO_F5.0

MISO rise time fast setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

1.1

2.1

3.6

—

9.6

12.5

17.8

tF_MISO_F5.0

MISO fall time fast setting:

• CL = 30 pF

• CL = 75 pF

• CL = 150 pF

1.1

2.1

3.6

—

9.6

12.5

17.8

Table 18. SPI electrical characteristics

Characteristics noted under conditions -40 ºC < TA < +125 ºC, referenced to ground, unless otherwise noted. Typical values noted reflect

the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.

Symbol

Characteristic

Min.

Typ.

Max.

Unit

Notes

PT2000 Datasheet(PDF) 33 Page - NXP Semiconductors

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