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S12ECT16B8CV2 Datasheet(PDF) 128 Page - NXP Semiconductors |
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S12ECT16B8CV2 Datasheet(HTML) 128 Page - NXP Semiconductors |
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128 / 152 page ![]() MC9S12XDP512 Device User Guide V01.12 A.3.1.3 Sector Erase Erasing a 1024 byte Flash sector or a 4 byte EEPROM sector takes: The setup time can be ignored for this operation. A.3.1.4 Mass Erase Erasing a NVM block takes: The setup time can be ignored for this operation. A.3.1.5 Blank Check The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup of the command. Table A-15 NVM Timing Characteristics Conditions are shown in Table A-4 unless otherwise noted Num C Rating Symbol Min Typ Max Unit 1 D External Oscillator Clock (MC9S12XDP512C< V, M) fNVMOSC 0.5 80 1 NOTES: 1. Restrictions for oscillator in crystal mode apply! MHz 2 D Bus frequency for Programming or Erase Operations fNVMBUS 1 MHz 3 D Operating Frequency fNVMOP 150 200 kHz 4 P Single Word Programming Time tswpgm 46 2 2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency fbus. 74.5 3 µs 5D Flash Burst Programming consecutive word 4 tbwpgm 20.4 2 31 3 µs 6D Flash Burst Programming Time for 32 Words 4 tbrpgm 1331.2 2 2027.5 3 µs 7 P Sector Erase Time tera 20 5 26.7 3 ms 8 P Mass Erase Time tmass 100 5 133 3 ms 9 D Blank Check Time Flash per block tcheck 11 6 65546 7 tcyc 10 D Blank Check Time EEPROM per block tcheck 11 6 20587 tcyc t era 4000 1 f NVMOP --------------------- ⋅ ≈ t mass 20000 1 f NVMOP --------------------- ⋅ ≈ t check location t cyc 10 t cyc ⋅ + ⋅ ≈ Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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