33989 datasheet(8/66 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33989

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

POWER OUTPUT (VDD1) IN STOP MODE (16)

VDD1 Output Voltage

IDD1 < = 2.0 mA

VDDSTOP

4.75

5.00

5.25

VDD1 Output Voltage

IDD1 < = 10 mA

VDDSTOP2

4.75

5.00

5.25

IDD1 Stop Output Current to Wake-up SBC

IDD1SWU

IDD1 Over Current to Wake-up Deglitcher Time

(17)

IDD1DGLT

µs

Reset Threshold

RSTSTOP1

4.5

4.6

4.7

Reset Threshold

RSTSTOP2

4.1

4.2

4.3

Line Regulation (C at VDD1 = 47 µF Tantal)

5.5 V < VSUP < 27 V, IDD = 2.0 mA

LRS

—

5.0

Load Regulation (C at VDD1 = 47 µF Tantal)

1 mA < IDD < 10 mA

LDS

—

Max Decoupling Capacitor at VDD1 Pin, in Stop Mode(18)

VDDst-cap

—

200

µF

TRACKING VOLTAGE REGULATOR (V2) (19)

V2 Output Voltage (C at V2 = 10 µF Tantal)

I2 from 2.0 to 200 mA, 5.5 V < VSUP < 27 V

0.99

1.0

1.01

VDD1

I2 Output Current (for information only)

Depending Upon External Ballast Transistor

200

—

V2 Control Drive Current Capability

Worst Case at TJ = 125°C

12CTRL

0.0

—

V2LOW Flag Threshold

V2LTH

3.75

4.0

4.25

LOGIC OUTPUT PIN (MISO) (20)

Low Level Output Voltage

IOUT = 1.5 mA

VOL

0.0

—

1.0

High Level Output Voltage

IOUT = 250 µA

VOH

VDD1-0.9

—

VDD1

Tri-Stated MISO Leakage Current

0 V < VMISO < VDD

IHZ

-2.0

—

2.0

µA

Notes

16.

If stop mode is used, the capacitor connected at VDD pin should not exceed the maximum specified by the “VDDst-cap” parameter.

If capacitor value is exceeded, upon entering stop mode, VDD output current may exceed the IDDSWU and prevent the device to stay in

stop mode.

17.

Guaranteed by design; however, it is not production tested.

18.

Guaranteed by design.

19.

V2 specification with external capacitor

- Stability requirement: C > 42 µF and ESR < 1.3

Ω (Tantalum capacitor), external resistor between base and emitter required

- Measurement conditions: Ballast transistor MJD32C, C = 10 µF Tantalum, 2.2 k resistor between base and emitter of ballast transistor

20.

Push/Pull structure with tri-state condition CS high.

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 5.5 V

≤ V

SUP ≤ 18 V, - 40°C ≤ T

A ≤ 125°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

33989 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc

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