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33800 Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc |
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33800 Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc |
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10 / 39 page ![]() Analog Integrated Circuit Device Data 10 Freescale Semiconductor 33800 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS SPI DIGITAL INTERFACE (SO, SI, CS, SCLK) (CONTINUED) Sleep Mode EN and DEFAULT Input Current VD D = 0.0V, VEN = 5.0V, VD E FA U LT = 5.0V ILOGICSS -10 – 10 µA Normal Mode Input Logic Pull-down Current(9) 0.8V to 5.0V ILOGICPD 5.0 15 25 µA Normal Mode DEFAULT Pull-up Current IDEFAULTPU -5.0 – -25 µA SCLK, Tri-state SO Output 0.0V to 5.0V ISCLK, ITRISO -10 – 10 µA CS Input Current CS = VDD ICS -10 – 10 µA CS Pull-up Current CS = 0.0V ICSPU -5.0 – -30 µA CS Leakage Current to VDD CS = 5.0V, VDD = 0.0V ICS(LKG) – – 10 µA SO High-state Output Voltage ISOHIGH = -1.0mA VSOHIGH VDD - 0.4 – – V SO Low-state Output Voltage ISOLOW = 1.0mA VSOLOW – – 0.4 V EN Input Pull-down Current EN = VDD IENPD 10 50 100 µA PREDRIVER OUTPUT FUNCTION (GD1 - GD6) Gate Drive Output Voltage IGATEDRIVE = 100µA IGATEDRIVE = - 100µA VGS(ON) VGS(OFF) 5.0 – 7.0 0.2 9.0 0.5 V Gate Drive Sink and Source Current IGATEDRIVE – 2.0 5.0 mA Sleep Mode Gate to Source Resistor RGS(PULLDOWN) 65 200 300 K Ω Short Fault Detection Voltage Threshold VDD = High, Outputs Programmed ON Programmable from 0.5V to 3.0V in 0.5V increments. VDS(FLTTH) -20% +20% V Open Fault Detection Voltage Threshold VDD = High, Outputs Programmed OFF VDS(FLTTH) 2.0 2.5 3.0 V Notes 9. Parameter applies to P1, P3, P5, P7, PWM1 to PWM6, SI and VCAL, and are guaranteed by design. Table 3. Static Electrical Characteristics Characteristics noted under conditions 3.0V ≤ V DD ≤ 5.5V, 9.0V ≤ VPWR ≤ 18V, - 40°C ≤ TA ≤ 125°C, GND = 0V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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