DRV8353FS datasheet(32/83 Pages) TI2

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8.3.1.4.4 MOSFET VDS Monitors

The gate drivers implement adjustable VDS voltage monitors to detect overcurrent or short-circuit conditions on

the external power MOSFETs. When the monitored voltage is greater than the VDS trip point (VVDS_OCP) for

longer than the deglitch time (tOCP), an overcurrent condition is detected and action is taken according to the

device VDS fault mode.

The high-side VDS monitors measure the voltage between the VDRAIN and SHx pins. In devices with three

current-shunt amplifiers (DRV8353F), the low-side VDS monitors measure the voltage between the SHx and

SPx pins. If the current shunt amplifier is unused, tie the SP pins to the common ground point of the external

half-bridges. On device options without the current shunt amplifiers (DRV8350F) the low-side VDS monitor

measures between the SHx and SLx pins.

For the SPI devices, the low-side VDS monitor reference point can be changed between the SPx and SNx pins

if desired with the LS_REF register setting. This is only for the low-side VDS monitor. The high-side VDS monitor

stays between the VDRAIN and SHx pins.

The VVDS_OCP threshold is programmable between 0.06 V and 2 V on SPI device and between 0.06 V and 1 V

on hardware interface devices. Additional information on the VDS monitor levels are described in the Section 8.6

section for SPI devices and in the Section 8.3.3 section hardware interface device.

GHx

SHx

GLx

VDRAIN

SLx

VDS

VVDS_OCP

VDS

VVDS_OCP

Figure 8-17. DRV8350F VDS Monitors

DRV8350F, DRV8353F

SLVSFV1B – AUGUST 2018 – REVISED AUGUST 2021

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DRV8353FS Datasheet(PDF) 32 Page - Texas Instruments