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DRV8353FS Datasheet(PDF) 1 Page - Texas Instruments |
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DRV8353FS Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 83 page  DRV835xF 100-V Three-Phase Smart Gate Driver 1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent shoot-through – 50-mA to 1-A peak source current – 100-mA to 2-A peak sink current – dV/dt mitigation through strong pulldown • Integrated gate driver power supplies – High-side doubler charge pump For 100% PWM duty cycle control – Low-side linear regulator • Integrated triple current shunt amplifiers – Adjustable gain (5, 10, 20, 40 V/V) – Bidirectional or unidirectional support • 6x, 3x, 1x, and independent PWM modes – Supports 120° sensored operation • SPI or hardware interface available • Low-power sleep mode (20 µA at VVM = 48-V) • Integrated protection features – VM undervoltage lockout (UVLO) – Gate drive supply undervoltage (GDUV) – MOSFET VDS overcurrent protection (OCP) – MOSFET shoot-through prevention – Gate driver fault (GDF) – Thermal warning and shutdown (OTW/OTSD) – Fault condition indicator (nFAULT) 2 Applications • 3-phase brushless-DC (BLDC) motor modules • Servo drives, Factory automation • Linear motor transport systems • Industrial collaborative robot • Autonomous Guided Vehicle, Delivery Drones • E-Bikes, E-scooters, and E-mobility 3 Description The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes. The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table. Device Information (1)PART NUMBER PACKAGE BODY SIZE (NOM) DRV8350F WQFN (32) 5.00 mm × 5.00 mm DRV8353F WQFN (40) 6.00 mm × 6.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 9 to 75 V DRV835xF Three-Phase Smart Gate Driver PWM Gate Drive Current Sense Current Sense 3x Shunt Amplifiers nFAULT M SPI or H/W Protection 7 to 100 V Drain Sense Simplified Schematic DRV8350F, DRV8353F SLVSFV1B – AUGUST 2018 – REVISED AUGUST 2021 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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