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DRV8353FS Datasheet(PDF) 13 Page - Texas Instruments

Part # DRV8353FS
Description  DRV835xF 100-V Three-Phase Smart Gate Driver
PDF  83 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

DRV8353FS Datasheet(HTML) 13 Page - Texas Instruments

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at TA = –40°C to +125°C, VVM = 9 to 75 V, VVDRAIN = 9 to 100 V, VVIN = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VVDS_OCP
VDS overcurrent
trip voltage
SPI Device
DRV835xF: VDS_LVL = 0000b
0.041
0.06
0.072
V
DRV835xF: VDS_LVL = 0001b
0.051
0.07
0.084
DRV835xF: VDS_LVL = 0010b
0.061
0.08
0.096
DRV835xF: VDS_LVL = 0011b
0.071
0.09
0.108
DRV835xF: VDS_LVL = 0100b
0.081
0.1
0.115
DRV835xFR: VDS_LVL = 0000b
0.048
0.06
0.072
DRV835xFR: VDS_LVL = 0001b
0.056
0.07
0.084
DRV835xFR: VDS_LVL = 0010b
0.064
0.08
0.096
DRV835xFR: VDS_LVL = 0011b
0.072
0.09
0.108
DRV835xFR: VDS_LVL = 0100b
0.085
0.1
0.115
VDS_LVL = 0101b
0.18
0.2
0.22
VDS_LVL = 0110b
0.27
0.3
0.33
VDS_LVL = 0111b
0.36
0.4
0.44
VDS_LVL = 1000b
0.45
0.5
0.55
VDS_LVL = 1001b
0.54
0.6
0.66
VDS_LVL = 1010b
0.63
0.7
0.77
VDS_LVL = 1011b
0.72
0.8
0.88
VDS_LVL = 1100b
0.81
0.9
0.99
VDS_LVL = 1101b
0.9
1.0
1.1
VDS_LVL = 1110b
1.35
1.5
1.65
VDS_LVL = 1111b
1.8
2
2.2
H/W Device
DRV835xF: VDS = Tied to GND
0.041
0.06
0.072
V
DRV835xF: VDS = 18 kΩ ± 5% tied to GND
0.081
0.1
0.115
DRV835xFR: VDS = Tied to GND
0.048
0.06
0.072
DRV835xFR: VDS = 18 kΩ ± 5% tied to GND
0.085
0.1
0.115
VDS = 75 kΩ ± 5% tied to GND
0.18
0.2
0.22
VDS = Hi-Z
0.36
0.4
0.44
VDS = 75 kΩ ± 5% tied to DVDD
0.63
0.7
0.77
VDS = 18 kΩ ± 5% tied to DVDD
0.9
1
1.1
VDS = Tied to DVDD
Disabled
tOCP_DEG
VDS and VSENSE
overcurrent deglitch time
SPI Device
OCP_DEG = 00b
1
µs
OCP_DEG = 01b
2
OCP_DEG = 10b
4
OCP_DEG = 11b
8
H/W Device
4
VSEN_OCP
VSENSE overcurrent trip
voltage
SPI Device
SEN_LVL = 00b
0.25
V
SEN_LVL = 01b
0.5
SEN_LVL = 10b
0.75
SEN_LVL = 11b
1
H/W Device
1
tRETRY
Overcurrent retry time
SPI Device
TRETRY = 0b
8
ms
TRETRY = 1b
50
μs
H/W Device
8
ms
TOTW
Thermal warning temperature
Die temperature, TJ
130
150
170
°C
TOTSD
Thermal shutdown temperature
Die temperature, TJ
150
170
190
°C
THYS
Thermal hysteresis
Die temperature, TJ
20
°C
www.ti.com
DRV8350F, DRV8353F
SLVSFV1B – AUGUST 2018 – REVISED AUGUST 2021
Copyright © 2021 Texas Instruments Incorporated
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Product Folder Links: DRV8350F DRV8353F



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