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DRV8353FS Datasheet(PDF) 7 Page - Texas Instruments |
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DRV8353FS Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 83 page ![]() 7.3 Recommended Operating Conditions at TA = –40°C to +125°C (unless otherwise noted) MIN MAX UNIT GATE DRIVER VVM Gate driver power supply voltage (VM) 9 75 V VVDRAIN Charge pump reference and drain voltage sense (VDRAIN) 7 100 V VI Input voltage (ENABLE, GAIN, IDRIVE, INHx, INLx, MODE, nSCS, SCLK, SDI, VDS) 0 5.5 V fPWM Applied PWM signal (INHx, INLx) 0 200(1) kHz tSH Switch-node slew rate range (SHx) 0 2 V/ns IGATE_HS High-side average gate-drive current (GHx) 0 25(1) mA IGATE_LS Low-side average gate-drive current (GLx) 0 25(1) mA IDVDD External load current (DVDD) 0 10(1) mA VVREF Reference voltage input (VREF) 3 5.5 V ISO Shunt amplifier output current (SOx) 0 5 mA VOD Open drain pullup voltage (nFAULT, SDO) 0 5.5 V IOD Open drain output current (nFAULT, SDO) 0 5 mA TA Operating ambient temperature –40 125 °C TJ Operating junction temperature –40 150 °C (1) Power dissipation and thermal limits must be observed. 7.4 Thermal Information THERMAL METRIC(1) DRV8350F DRV8353F UNIT RTV (WQFN) RTA (WQFN) 32 PINS 40 PINS RθJA Junction-to-ambient thermal resistance 29.2 26.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 15.2 13.1 °C/W RθJB Junction-to-board thermal resistance 9.2 8.4 °C/W ψJT Junction-to-top characterization parameter 0.1 0.1 °C/W ψJB Junction-to-board characterization parameter 9.2 8.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.2 1.1 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. www.ti.com DRV8350F, DRV8353F SLVSFV1B – AUGUST 2018 – REVISED AUGUST 2021 Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 7 Product Folder Links: DRV8350F DRV8353F |
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