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DRV8353FS Datasheet(PDF) 7 Page - Texas Instruments

Part # DRV8353FS
Description  DRV835xF 100-V Three-Phase Smart Gate Driver
PDF  83 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

DRV8353FS Datasheet(HTML) 7 Page - Texas Instruments

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7.3 Recommended Operating Conditions
at TA = –40°C to +125°C (unless otherwise noted)
MIN
MAX
UNIT
GATE DRIVER
VVM
Gate driver power supply voltage (VM)
9
75
V
VVDRAIN
Charge pump reference and drain voltage sense (VDRAIN)
7
100
V
VI
Input voltage (ENABLE, GAIN, IDRIVE, INHx, INLx, MODE, nSCS, SCLK, SDI, VDS)
0
5.5
V
fPWM
Applied PWM signal (INHx, INLx)
0
200(1)
kHz
tSH
Switch-node slew rate range (SHx)
0
2
V/ns
IGATE_HS
High-side average gate-drive current (GHx)
0
25(1)
mA
IGATE_LS
Low-side average gate-drive current (GLx)
0
25(1)
mA
IDVDD
External load current (DVDD)
0
10(1)
mA
VVREF
Reference voltage input (VREF)
3
5.5
V
ISO
Shunt amplifier output current (SOx)
0
5
mA
VOD
Open drain pullup voltage (nFAULT, SDO)
0
5.5
V
IOD
Open drain output current (nFAULT, SDO)
0
5
mA
TA
Operating ambient temperature
–40
125
°C
TJ
Operating junction temperature
–40
150
°C
(1)
Power dissipation and thermal limits must be observed.
7.4 Thermal Information
THERMAL METRIC(1)
DRV8350F
DRV8353F
UNIT
RTV (WQFN)
RTA (WQFN)
32 PINS
40 PINS
RθJA
Junction-to-ambient thermal resistance
29.2
26.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
15.2
13.1
°C/W
RθJB
Junction-to-board thermal resistance
9.2
8.4
°C/W
ψJT
Junction-to-top characterization parameter
0.1
0.1
°C/W
ψJB
Junction-to-board characterization parameter
9.2
8.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.2
1.1
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
www.ti.com
DRV8350F, DRV8353F
SLVSFV1B – AUGUST 2018 – REVISED AUGUST 2021
Copyright © 2021 Texas Instruments Incorporated
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Product Folder Links: DRV8350F DRV8353F



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