TPS737 datasheet(6/50 Pages) TI2

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5.6 Electrical Characteristics

Over operating temperature range (TJ = –40°C to 125°C), VIN = VOUT(nom) + 1V(1) , IOUT = 10mA, VEN = 2.2V, and COUT =

2.2µF (unless otherwise noted). Typical values are at TJ = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN

Input voltage range(1) (2)

2.2

5.5

VFB

Internal reference (DCQ

package)

TJ = 25°C

1.198

1.204

1.21

VFB

Internal reference (DRB and

DRV packages)

TJ = 25°C

1.192

1.204

1.216

VOUT

Output voltage range

(TPS73701)(3)

VFB

5.5 -

VDO

Accuracy(1) (4)

Nominal

TJ = 25°C

–1

5.36V < VIN < 5.5V, VOUT =

5.08V,

10mA < IOUT < 800mA,

–40°C < TJ <

85°C, TPS73701, legacy

silicon (DCQ)

–2

over VIN, IOUT, and T

VOUT + 0.5V ≤ VIN ≤

5.5V; 10mA ≤ IOUT ≤ 1A,

legacy silicon

–3

±0.5

VOUT + 0.5V ≤ VIN ≤

5.5V; 10mA ≤ IOUT ≤ 1A, new

silicon

–1.5

±0.5

1.5

ΔVOUT(ΔVIN)

Line regulation (1)

VOUT(nom) + 0.5V ≤ VIN ≤ 5.5V

0.01

%/V

ΔVOUT(ΔIOUT)

Load regulation

1mA ≤ IOUT ≤ 1A

0.002

%/mA

ΔVOUT(ΔIOUT)

Load regulation

10mA ≤ IOUT ≤ 1 A

0.0005

%/mA

VDO

Dropout voltage(5) (VIN =

VOUT(nom) - 0.1V)

IOUT = 1A, legacy silicon

130

500

VDO

Dropout voltage(5) (VIN =

VOUT(nom) - 0.1V)

IOUT = 1A, new silicon

122

250

ZO(DO)

Output impedance in dropout 2.2V ≤ VIN ≤ VOUT + VDO

0.25

Ω

ICL

Output current limit

VOUT = 0.9 × VOUT(nom)

1.05

1.6

2.2

ISC

Short-circuit current

VOUT = 0V, legacy silicon

450

ISC

Short-circuit current

VOUT = 0V, new silicon

510

IREV

Reverse leakage current(6) (-

IIN)

VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT

0.1

µA

IGND

Ground pin current

IOUT = 10mA (IQ)

400

µA

IGND

Ground pin current

IOUT = 1A, legacy silicon

1300

µA

IGND

Ground pin current

IOUT = 1A, new silicon

880

µA

ISHDN

Shutdown current (IGND)

VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V

IFB

Feedback pin current

(TPS73701)

0.1

0.6

µA

PSRR

Power-supply rejection ratio

(ripple rejection)

f = 100Hz, IOUT = 1A

f = 10kHz, IOUT = 1A

Output noise voltage, BW =

10Hz to 100kHz

COUT = 10µF

27 ×

VOUT

µVRMS

tSTR

Startup time

VOUT = 3V, RL = 30Ω, COUT = 1μF, legacy silicon

600

µs

tSTR

Startup time

VOUT = 3V, RL = 30Ω, COUT = 1μF, new silicon

431

µs

VEN(high)

EN pin high (enabled)

1.7

VIN

VEN(low)

EN pin low (shutdown)

0.5

IEN

Enable pin current (enabled)

VEN = 5.5V

TSD

Thermal shutdown

temperature

Shutdown, temperature increasing

160

°C

Reset, temperature decreasing

140

Operating junction

temperature

–40

125

℃

(1)

Minimum VIN = VOUT + VDO or 2.2V, whichever is greater.

TPS737

SBVS067W – JANUARY 2006 – REVISED AUGUST 2025

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