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TPS737 Datasheet(PDF) 12 Page - Texas Instruments |
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TPS737 Datasheet(HTML) 12 Page - Texas Instruments |
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12 / 50 page ![]() 5.7 Typical Characteristics (continued) for all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 1 V, IOUT = 10 mA, VEN = 2.2 V, and COUT = 2.2 μF (unless otherwise noted) 40 35 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V V - (V) IN OUT Frequency=10kHz C =10 F V =2.5V I =100mA m OUT OUT OUT Legacy silicon Figure 5-25. PSRR (Ripple Rejection) vs (VIN – VOUT) New silicon Figure 5-26. PSRR (Ripple Rejection) vs (VIN – VOUT) 1 0.1 0.01 10 100 1k 10k 100k Frequency(Hz) C =1 F m OUT C =10 F m OUT I =150mA OUT Legacy silicon Figure 5-27. Noise Spectral Density New silicon Figure 5-28. Noise Spectral Density 60 55 50 45 40 35 30 25 20 C (F) FF 10p 100p 1n 10n V = 2.5V OUT C = 0 F μ OUT R = 39.2kΩ 1 10Hz < Frequency < 100kHz Legacy silicon Figure 5-29. TPS73701 RMS Noise Voltage vs CFB New silicon Figure 5-30. TPS73701 RMS Noise Voltage vs CFB TPS737 SBVS067W – JANUARY 2006 – REVISED AUGUST 2025 www.ti.com 12 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: TPS737 |
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