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TPS737 Datasheet(PDF) 9 Page - Texas Instruments |
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TPS737 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 50 page ![]() 5.7 Typical Characteristics (continued) for all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 1 V, IOUT = 10 mA, VEN = 2.2 V, and COUT = 2.2 μF (unless otherwise noted) 200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 150 Temperature( C) ° 125 Legacy silicon Figure 5-7. Dropout Voltage vs Temperature New silicon Figure 5-8. Dropout Voltage vs Temperature 30 25 20 15 10 5 0 V Error (%) OUT I =10mA OUT Legacy silicon Figure 5-9. Output Voltage Histogram 18 16 14 12 10 8 6 4 2 0 WorstCasedV /dT(ppm/°C) OUT I =10mA OUT Legacy silicon Figure 5-10. Output Voltage Drift Histogram 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 I (mA) OUT V =5.0V IN V =3.3V IN V =2.2V IN Legacy silicon Figure 5-11. Ground Pin Current vs Output Current IOUT (mA) 0 200 400 600 800 1,000 0 500 1,000 1,500 2,000 2,500 VIN = 2.2V VIN = 3.3V VIN = 5.0V New silicon Figure 5-12. Ground Pin Current vs Output Current www.ti.com TPS737 SBVS067W – JANUARY 2006 – REVISED AUGUST 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 9 Product Folder Links: TPS737 |
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