LPC3240 datasheet(45/80 Pages) NXP

45 / 80 page

LPC3220_30_40_50

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Product data sheet

Rev. 2.1 — 24 June 2014

45 of 80

NXP Semiconductors

LPC3220/30/40/50

16/32-bit ARM microcontrollers

Limiting values

[1]

The following applies to Table 7:

a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive

static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated

maximum.

b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless

otherwise noted.

[2]

Core, PLL, oscillator, and RTC supplies; applies to pins VDD_CORE, VDD_COREFXD, VDD_OSC, VDD_PLL397, VDD_PLLHCLK,

VDD_PLLUSB, VDD_RTC, VDD_RTCCORE, and VDD_RTCOSC.

[3]

I/O pad supply; applies to domains VDD_EMC.

[4]

Applies to VDD_AD pins.

[5]

Applies to pins in the following domains VDD_IOA, VDD_IOB, VDD_IOC, and VDD_IOD.

[6]

Including voltage on outputs in 3-state mode.

[7]

Based on package heat transfer, not device power consumption. Calculated package thermal resistance (ThetaJA): 35.766 C/W (with

JEDEC Test Board and 0 m/s airflow,

15 % accuracy).

[8]

Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k

 series resistor.

[9]

Charge device model per AEC-Q100-011.

Table 7.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).[1]

Symbol

Parameter

Conditions

Notes Min

Max

Unit

VDD(1V2)

supply voltage (1.2 V)

[2]

0.5

+1.4

VDD(EMC)

external memory controller

supply voltage

[3]

0.5

+4.6

VDDA(3V3) analog supply voltage (3.3 V)

[4]

0.5

+4.6

VDD(IO)

input/output supply voltage

[5]

0.5

+4.6

VIA

analog input voltage

0.5

+4.6

input voltage

1.8 V pins

[6]

0.5

+2.4

3.3 V pins

[6]

0.5

+4.6

IDD

supply current

per supply pin

100

ISS

ground current

per ground pin

100

Tstg

storage temperature

65

+150

C

Ptot(pack)

total power dissipation

(per package)

max. junction temp 125

C

max. ambient temp 85

C

[7] -1.12

VESD

electrostatic discharge voltage

HBM

[8] -

2500

CDM

[9] -

1000

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