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HD404374FT Datasheet(PDF) 111 Page - Renesas Technology Corp |
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HD404374FT Datasheet(HTML) 111 Page - Renesas Technology Corp |
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111 / 161 page ![]() HD404374/HD404384/HD404389/HD404082/HD404084 Series Rev.5.00, Sep.11.2003, page 111 of 161 Notes: 1. When programming with a PROM writer, set up each ROM size to the address given in table 29. If it is programmed erroneously to an address given in table 29 or later, check of writing of PROM may become impossible. Particularly, caution should be exercised in the case of a plastic package since reprogramming is impossible with it. Set the data in unused addresses to $FF. 2. If the indexes of the PROM writer socket, socket adapter and product are not aligned precisely, the product may break down due to overcurrent. Be sure to check that they are properly set to the writer before starting the writing process. 3. Two levels of program voltages (VPP) are available for the PROM: 12.5V and 21V. Our product employs a VPP of 12.5V. If a voltage of 21V is applied, permanent breakdown of the product will result. The VPP of 12.5V is obtained for the PROM writer by setting it according to the Intel 27258 specifications. Table 27 Socket Adapters Package Model Name Manufacturer FP-30D Please ask Renesas Technology service section. DP-28S Please ask Renesas Technology service section. Writing/Verification Programming of the built-in program ROM employs a high speed programming method. With this method, high speed writing is effected without voltage stress to the device or without damaging the reliability of the written data. A basic programming flow chart is shown in figure 71 and a timing chart in figure 72. For precautions for PROM writing procedure, refer to “Precautions for use of ZTAT TM microcomputer with build-in programmable ROM”. Table 28 Selection of Mode Mode CE CE CE CE OE OE OE OE V PP O 0 to O4 Writing “Low” “High” V PP Data input Verification “High” “Low” V PP Data output Prohibition of programming “High” “High” V PP High impedance |
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