28F008B3 datasheet(32/49 Pages) INTEL

32 / 49 page

SMART 3 ADVANCED BOOT BLOCK–BYTE-WIDE

PRELIMINARY

Table 10. DC Characteristics (Continued)

Sym

Parameter

Notes

VCC = 2.7V–3.6V

Unit

Test Conditions

Min

Max

VIL

Input Low Voltage

–0.4

0.4

VIH

Input High Voltage

VCCQ –

0.4V

VOL

Output Low Voltage

0.10

VCC = VCCMin = VCCQMin

IOL = 100

µA

VOH

Output High Voltage

VCCQ –

0.1V

VVCC = VCCMin = VCCQMin

IOH = –100 µA

VPPLK VPP Lock-Out Voltage

1.5

Complete Write Protection

VPPH1 VPP during Prog/Erase

Operations

2.7

3.6

VPPH2

3,6

11.4

12.6

VLKO

VCC Program/Erase Lock

Voltage

1.5

VLKO2

VCCQ Program/Erase

Lock Voltage

1.2

NOTES:

All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25°C.

ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is ICCR. If the

device is read while in program suspend, current draw is ICCR.

Erase and Program are inhibited when VPP < VPPLK and not guaranteed outside the valid VPP ranges of VPPH1 and VPPH2.

Sampled, not 100% tested.

Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs).

Applying VPP = 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks

and 2500 cycles on the parameter blocks. VPP may be connected to 12V for a total of 80 hours maximum. See Section 3.4

for details.

Includes the sum of VCC and VCCQ current.

Table 11. Capacitance (TA = 25°C, f = 1 MHz)

Sym

Parameter

Notes

Typ

Max

Units

Conditions

CIN

Input Capacitance

VIN = 0V

COUT

Output Capacitance

VOUT = 0V

NOTE:

Sampled, not 100% tested.

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