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28F008B3 Datasheet(PDF) 37 Page - Intel Corporation

Part # 28F008B3
Description  SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
PDF  49 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F008B3 Datasheet(HTML) 37 Page - Intel Corporation

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E
SMART 3 ADVANCED BOOT BLOCK–BYTE-WIDE
37
PRELIMINARY
Table 13. DC Characteristics: VCCQ = 1.8V–2.2V (Continued)
Sym
Parameter
Notes
VCC1:
2.7V–2.85V
VCC2:
2.7V–3.3V
Unit
Test Conditions
Typ
Max
VIL
Input Low Voltage
–0.2
0.2
V
VIH
Input High Voltage
VCCQ –
0.2V
V
VOL
Output Low Voltage
–0.10
0.10
V
VCC = VCCMin
VCCQ = VCCQMin
IOL = 100 µA
VOH
Output High Voltage
VCCQ –
0.1V
V
VCC = VCCMin
VCCQ = VCCQMin
IOH = –100 µA
VPPLK VPP Lock-Out Voltage
3
1.5
V
Complete Write Protection
VPPH1 VPP during Prog./Erase
Operations
3
2.7
2.85
V
VPPH2
3
2.7
3.3
V
VPPH3
3,6
11.4
12.6
V
VLKO1 VCC Program/Erase Lock
Voltage
1.5
V
VLKO2 VCCQ Program/Erase
Lock Voltage
1.2
V
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25°C.
2.
ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is ICCR. If the
device is read while in program suspend, current draw is ICCR.
3.
Erases and Writes inhibited when VPP < VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1,VPPH2. or VPPH3.
4.
Sampled, not 100% tested.
5.
Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs).
6.
Applying VPP = 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. VPP may be connected to 12V for a total of 80 hours maximum. See Section 3.4
for details.
7
Includes the sum of VCC and VCCQ current
Table 14. Capacitance (TA = 25°C, f = 1 MHz)
Sym
Parameter
Notes
Typ
Max
Units
Conditions
CIN
Input Capacitance
1
6
8
pF
VIN = 0V
COUT
Output Capacitance
1
10
12
pF
VOUT = 0V
NOTE:
1.
Sampled, not 100% tested.



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