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GD25Q21 Datasheet(PDF) 41 Page - ELM Electronics |
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GD25Q21 Datasheet(HTML) 41 Page - ELM Electronics |
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41 / 49 page ![]() 41 Rev.1.1 49 - http://www.elm-tech.com GD25Q21BxIGx Uniform Sector Dual and Quad Serial Flash 8.1. Power-On Timing Symbol Parameter Min Typ Max Unit tVSL VCC(min) To CS# Low 10 us tPUW Time Delay Before Write Instruction 1 10 ms VWI Write Inhibit Voltage 2.1 2.3 2.5 V Table3. Power-Up Timing and Write Inhibit Threshold 8. ELECTRICAL CHARACTERISTICS 8.2. Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status Register contains 00H (all Status Register bits are 0). 8.3. Data Retention and Endurance Parameter Test Condition Min Unit Minimum Pattern Data Retention Time 150°C 10 Years 125°C 20 Years Erase/Program Endurance -40 to 85°C 100K Cycles 8.4. Latch Up Characteristics Parameter Min Max Input Voltage Respect To VSS On I/O Pins -1.0V VCC+1.0V VCC Current -100mA 100mA Figure 39. Power-on Timing Sequence Diagram |
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