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LM93 Datasheet(PDF) 90 Page - National Semiconductor (TI) |
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LM93 Datasheet(HTML) 90 Page - National Semiconductor (TI) |
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90 / 92 page ![]() Symbol Pin # D1 D2 D4 D5 D6 SNP R1 AD_IN1 23 UU U U U AD_IN2 24 UU U U U AD_IN3 25 UU U U U AD_IN4 26 UU U U U AD_IN5 27 UU U U U AD_IN6 28 UU U U U AD_IN7 29 UU U U U AD_IN8 30 UU U U U AD_IN9 31 UU U U U AD_IN10 32 UU U U U AD_IN11 33 UU U U U AD_IN12 34 UU U U U AD_IN13 35 UU U U U AD_IN14 36 UU U U U AD_IN15 37 UU U U U ADDR_SEL 38 UU AD_IN16/V DD (V+) 39 UU U U GND 40 Internally shorted to AGND. PWM1 41 UU U 50 Ω PWM2 42 UU U 50 Ω P1_VID0 43 UU P1_VID1 44 UU P1_VID2 45 UU P1_VID3 46 UU P1_VID4 47 UU P1_VID5 48 UU P1_PROCHOT 49 UU U 50 Ω P2_PROCHOT 50 UU U 50 Ω P2_VID0 51 UU P2_VID1 52 UU P2_VID2 53 UU P2_VID3 54 UU P2_VID4 55 UU P2_VID5 56 UU Note 4: Human body model, 100 pF discharged through a 1.5 k Ω resistor. Machine model, 200 pF discharged directly into each pin. Note 5: Reflow temperature profiles are different for lead-free and non lead-free packages. Note 6: The maximum power dissipation must be de-rated at elevated temperatures and is dictated by TJMAX, θJA and the ambient temperature, TA. The maximum allowable power dissipation at any temperature is PD = (TJMAX −TA)/ θJA. The θJAfor the LM93 when mounted to 1 oz. copper foil PCB the θJA with different air flow is listed in the following table. Air Flow Junction to Ambient Thermal Resistance, θ JA 0 m/s 79 ˚C/W 1.14 m/s (225 LFPM) 62 ˚C/W 2.54 m/s (500 LFPM) 52 ˚C/W Note 7: See the URL "http://www.national.com/packaging/" for other recommendations and methods of soldering surface mount devices. Note 8: When measuring an MMBT3904 transistor, 4 ˚C should be subracted from all temperature readings. Note 9: Typical parameters are at TJ =TA = 25 ˚C and represent most likely parametric norm. Note 10: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 11: TUE (Total Unadjusted Error) includes Offset, Gain and Linearity errors of the ADC. Note 12: Total Monitoring Cycle Time includes all temperature and voltage conversions. Note 13: Leakage current approximately doubles every 20 ˚C. Note 14: A total digital I/O current of 40mA can cause 6mV of offset in Vref. www.national.com 90 |
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