PC87591L datasheet(372/437 Pages) NSC

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372

Revision 1.07

7.0

Device Speciﬁcations

This section provides the power and grounding guidelines for the PC87591x, specifies the device’s maximum ratings and

electrical characteristics and describes its timing.

7.1

GENERAL DC ELECTRICAL CHARACTERISTICS

7.1.1

Recommended Operating Conditions

7.1.2

Absolute Maximum Ratings

If military- or aerospace-specified devices are required, please contact a National Semiconductor sales office or distributor

for availability and specifications.

Storage Temperature:

−65°C to +150°C

Temperature Under Bias: 0

°C to +70°C

Absolute maximum ratings are values beyond which damage to the device may occur. Unless otherwise specified, all volt-

ages are relative to ground.

Symbol

Parameter

Min

Typ

Max

Unit

VDD

Host Domain Supply Voltage

3.0

3.3

3.6

VCC

Core Domain Supply Voltage

3.0

3.3

3.6

AVCC

Analog Supply Voltage

3.15

3.3

3.45

VBAT

Battery Backup Supply Voltage

2.4

3.6

Operating Temperature

+70

°C

Symbol

Parameter

Conditions

Min

Max

Unit

VDD

Host Domain Supply Voltage

−0.5

+4.2

VCC

Core Domain Supply Voltage

−0.5

+4.2

AVCC Analog Supply Voltage

−0.5

+4.2

VBAT

Battery Backup Supply Voltage

−0.5

+4.2

Input Voltage

All other buffer types

−0.5

5.5

Buffer types: INAC

1,IN

AD,INDI,INOSC,

INPCI,INTS (IOPE0-3, IOPE6-7)

1. When ACM is enabled.

−0.5

VSUP

2 + 0.5

2. VSUP is VDD, VCC, AVCC or VBAT, according to the power well of the input.

Output Voltage

All other buffer types

−0.5

5.5

Buffer types: ODA,ODI,OOSC,OPCI

−0.5

VSUP

3 + 0.5

3. VSUP is VDD, VCC, AVCC or VBAT, according to the power well of the output.

TSTG

Storage Temperature

−65

+165

°C

Power Dissipation

Lead Temperature Soldering (10 s)

+260

°C

ESD Tolerance

ZAP

= 100 pF

ZAP

= 1.5 K

Ω4

4. Value based on test complying with RAI-5-048-RA human body model ESD testing.

2000

PC87591L Datasheet(PDF) 372 Page - National Semiconductor (TI)

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