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LINR2 Datasheet(PDF) 94 Page - fujitsu semiconductor |
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LINR2 Datasheet(HTML) 94 Page - fujitsu semiconductor |
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94 / 108 page  MB96320 Series 94 FME-MB96320 rev 7 7. FLASH memory program/erase characteristics *1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature measurements into normalized value at 85oC) (TA = -40˚C to 105˚C, VCC = AVCC = 3.0V to 5.5V, VSS = AVSS = 0V) Parameter Value Unit Remarks Min Typ Max Sector erase time - 0.9 3.6 s Without erasure pre-program- ming time Chip erase time - n*0.9 n*3.6 s Without erasure pre-program- ming time (n is the number of Flash sector of the device) Word (16-bit width) programming time - 23 370 us Without overhead time for sub- mitting write command Program/Erase cycle 10 000 - - cycle Flash data retention time 20 - - year *1 |
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