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S71PL254 Datasheet(PDF) 106 Page - SPANSION |
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S71PL254 Datasheet(HTML) 106 Page - SPANSION |
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106 / 196 page ![]() 106 Type 2 pSRAM pSRAM_Type02_15A0 May 3, 2004 Advance I n f o rmation 1. 16Mb: A2 ~ A19, 32Mb: A2 ~ A20, 64Mb: A2 ~ A21. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. tOE(max) is met only when OE# becomes enabled after tAA(max). If invalid address signals shorter than min. tRC are continuously repeated for over 4µs, the device needs a normal read timing (tRC) or needs to sustain standby state for min. tRC at least once in every 4µs. Write Timings Figure 29. Write Cycle #1 (WE# Controlled) Figure 30. Write Cycle #2 (CS1# Controlled) Address CS1# Data Undefined UB#, LB# WE# Data in Data out tWC tCW tWR tAW tBW tWP tAS tDH tDW tWHZ tOW High-Z High-Z Data Valid CS2 Address Data Valid UB#, LB# WE# Data in Data out High-Z tWC tCW tAW tBW tWP tDH tDW tWR tAS CS1# CS2 |
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