S71PL254 datasheet(110/196 Pages) SPANSION

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110

pSRAM Type 3

pSRAM_Type03_06A0 February 25, 2004

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I n f o rmation

AC Characteristics

Table 31. DC Characteristics (TA = -25°C to 85°C, VDD = 2.6 to 3.3V)

SYMBOL

PARAMETER

TEST CONDITION

MIN

MAX UNIT

IIL

Input Leakage Current

VIN = VSS to VDD

-1

µA

ILO

Output Leakage Current

VIO = VSS to VDD

CE1# = VIH, CE2 = VIL or

OE# = VIH or WE# = VIL

-1

µA

ICC1

Operating Current @ Min. Cycle Time

Cycle time = Min., 100% duty,

IIO = 0mA, CE1# = VIL, CE2 = VIH,

VIN = VIH or VIL

ICC2

Operating Current @ Max Cycle Time

Cycle time = 1

µs, 100% duty

IIO = 0mA, CE1# ≤ 0.2V,

CE2

≥ VDD -0.2V, VIN ≤ 0.2V

or VIN ≥ VDD -0.2V

ISB1

Standby Current (CMOS)

CE1# = VDD – 0.2V and

CE2 = VDD – 0.2V,

Other inputs = VSS ~ VCC

100

µA

ISBD

Deep Power-down

CE2

≤ 0.2V, Other inputs = VSS ~ VCC

µA

VOL

Output Low Voltage

IOL = 2.1mA

0.4

VOH

Output High Voltage

IOH = -1.0mA

2.4

Table 32. AC Characteristics and Operating Conditions (TA = -25°C to 85°C, VDD = 2.6 to 3.3V)

Cycle

Symbol

Parameter

Unit

Min

Max

tRC

Read Cycle Time

tAA

Address Access Time

tCO1

Chip Enable (CE#1) Access Time

tCO2

Chip Enable (CE2) Access Time

tOE

Output Enable Access Time

tBA

Data Byte Control Access Time

tLZ

Chip Enable Low to Output in Low-Z

tOLZ

Output Enable Low to Output in Low-Z

tBLZ

Data Byte Control Low to Output in Low-Z

tHZ

Chip Enable High to Output in High-Z

tOHZ

Output Enable High to Output in High-Z

tBHZ

Data Byte Control High to Output in High-Z

tOH

Output Data Hold Time

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