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S71PL254 Datasheet(PDF) 121 Page - SPANSION |
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S71PL254 Datasheet(HTML) 121 Page - SPANSION |
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121 / 196 page  August 30, 2004 pSRAM_Type04_18A0 pSRAM Type 4 121 Advance I n f o rmatio n Notes: 1. High-Z and Low-Z parameters are characterized and are not 100% tested. 2. The internal write time of the memory is defined by the overlap of WE#, CE#1 = VIL, CE2 = VIH, BHE and/or BLE =VIL. All signals must be Active to initiate a write and any of these signals can terminate a write by going Inactive. The data input set- up and hold timing should be referenced to the edge of the signal that terminates write. 3. Data I/O is high impedance if OE# ≥ VIH. 4. If Chip Enable goes Inactive simultaneously with WE# = High, the output remains in a high-impedance state. 5. During the Don’t Care period in the Data I/O waveform, the I/Os are in output state and input signals should not be applied. Figure 46. Write Cycle 1 (WE# Controlled) |
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