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SIM6800M Datasheet(PDF) 9 Page - Sanken electric |
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SIM6800M Datasheet(HTML) 9 Page - Sanken electric |
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9 / 52 page ![]() SIM6800M Series SIM6800M-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD 9 Jul. 18, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2014 3.4.1 SIM6811M Parameter Symbol Conditions Min. Typ. Max. Unit Drain-to-Source Leakage Current IDSS VDS = 500 V, VIN = 0 V — — 100 µA Drain-to-Source On Resistance RDS(ON) ID = 1.0 A, VIN = 5 V — 3.2 4.0 Ω Source-to-Drain Diode Forward Voltage VSD ISD =1.0 A, VIN = 0 V — 1.0 1.5 V High-side Switching Source-to-Drain Diode Reverse Recovery Time trr VDC = 300 V, IC = 1.0 A, inductive load, VIN = 0 →5 V or 5→0 V, Tj = 25 °C — 150 — ns Turn-on Delay Time td(on) — 770 — ns Rise Time tr — 70 — ns Turn-off Delay Time td(off) — 690 — ns Fall Time tf — 30 — ns Low-side Switching Source-to-Drain Diode Reverse Recovery Time trr VDC = 300 V, IC = 1.0 A, inductive load, VIN = 0 →5 V or 5→0 V, Tj = 25 °C — 150 — ns Turn-on Delay Time td(on) — 690 — ns Rise Time tr — 90 — ns Turn-off Delay Time td(off) — 650 — ns Fall Time tf — 50 — ns 3.4.2 SIM6812M Parameter Symbol Conditions Min. Typ. Max. Unit Drain-to-Source Leakage Current ICES VDS = 500 V, VIN = 0 V — — 100 µA Drain-to-Source On Resistance VCE(SAT) ID = 1.25 A, VIN = 5 V — 2.0 2.4 Ω Source-to-Drain Diode Forward Voltage VF ISD =1.25 A, VIN = 0 V — 1.0 1.5 V High-side Switching Source-to-Drain Diode Reverse Recovery Time trr VDC = 300 V, IC = 1.25 A, inductive load, VIN = 0 →5 V or 5→0 V, Tj = 25 °C — 140 — ns Turn-on Delay Time td(on) — 910 — ns Rise Time tr — 100 — ns Turn-off Delay Time td(off) — 700 — ns Fall Time tf — 40 — ns Low-side Switching Source-to-Drain Diode Reverse Recovery Time trr VDC = 300 V, IC = 1.25 A, inductive load, VIN = 0 →5 V or 5→0 V, Tj = 25 °C — 155 — ns Turn-on Delay Time td(on) — 875 — ns Rise Time tr — 110 — ns Turn-off Delay Time td(off) — 775 — ns Fall Time tf — 35 — ns |
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