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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Voltage

Total supply voltage, VS = (VS+ – VS–)

13.5

Supply turn-on/off dV/dT(2)

±0.35

V/µs

Input, output, power down and common-mode pin voltage range

(VS–) – 0.5

(VS+) + 0.5

Differential input voltage

±1

Current

Continuous input current

±10

Continuous output current(3)

±20

Temperature

Junction temperature, TJ

150

°C

Operating free-air temperature, TA

–40

125

°C

Storage temperature, Tstg

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These stress-only

ratings do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Staying below this specification ensures that the edge-triggered ESD absorption devices across the supply pins remains off.

(3)

Long-term continuous output current for electromigration limits.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±3500

Charged device model (CDM), per JEDEC specification JESD22-C101, all

pins(2)

±1250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Total supply voltage

2.85

12.6

Operating free-air temperature

–40

125

°C

7.4 Thermal Information

THERMAL METRIC(1)

THS4561

UNIT

DGK (VSSOP)

RUN (WQFN)

RGT (VQFN)

8 PINS

10 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

183.1

134.6

TBD

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

70.3

83.6

TBD

°C/W

RθJB

Junction-to-board thermal resistance

104.9

67.7

TBD

°C/W

ΨJT

Junction-to-top characterization parameter

10.8

7.2

TBD

°C/W

ΨJB

Junction-to-board characterization parameter

103.2

67.5

TBD

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

TBD

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

www.ti.com

THS4561

SBOS874C – AUGUST 2017 – REVISED DECEMBER 2020

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