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S12ECT16B8CV2 Datasheet(PDF) 116 Page - NXP Semiconductors |
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S12ECT16B8CV2 Datasheet(HTML) 116 Page - NXP Semiconductors |
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116 / 152 page ![]() MC9S12XDP512 Device User Guide — V01.12 6P Output High Voltage (pins in output mode) Full Drive IOH = –5.5mA VOH VDD5 – 0.4 -- V 7C Output Low Voltage (pins in output mode) Partial Drive IOL = +2mA VOL - - 0.4 V 8P Output Low Voltage (pins in output mode) Full Drive IOL = +5.5mA V OL - - 0.4 V 9P Internal Pull Up Device Current, tested at V IL Max. IPUL - - TBD µA 10 C Internal Pull Up Device Current, tested at V IH Min. IPUH TBD - - µA 11 P Internal Pull Down Device Current, tested at V IH Min. IPDH - - TBD µA 12 C Internal Pull Down Device Current, tested at V IL Max. IPDL TBD - - µA 13 D Input Capacitance Cin 6- pF 14 T Injection current2 Single Pin limit Total Device Limit. Sum of all injected currents IICS IICP -2.5 -25 - 2.5 25 mA 15 P Port H, J, P Interrupt Input Pulse filtered3 tPULSE 3 µs 16 P Port H, J, P Interrupt Input Pulse passed3 tPULSE 10 µs NOTES: 1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each 8 C to 12 C in the temperature range from 50 C to 125 C. 2. Refer to Section A.1.4 Current Injection, for more details 3. Parameter only applies in STOP or Pseudo STOP mode. Table A-6 3.3V I/O Characteristics Conditions are 3.0V < VDD5 <3.6V Temperature from -40C to +140C,unless otherwise noted Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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