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CMV300 Datasheet(PDF) 10 Page - ams-OSRAM AG

Part # CMV300
Description  VGA resolution CMOS image sensor
PDF  56 Pages
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Manufacturer  AMSOSRAM [ams-OSRAM AG]
Direct Link  https://ams-osram.com/
Logo AMSOSRAM - ams-OSRAM AG

CMV300 Datasheet(HTML) 10 Page - ams-OSRAM AG

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Reference:CMV300-datasheet-v2.11
CMV300 Datasheet
Page 8 of 54
© 2016 CMOSIS bvba
1 INTRODUCTION
1.1 OVERVIEW
The CMV300 is a high speed CMOS image sensor with 648 by 488 pixels (1/3 optical inch) developed for machine vision
applications. The image array consists of 7.4μm x 7.4μm pipelined global shutter pixels which allow exposure during
read out, while performing CDS operation. The image sensor has 4 8, 10 or 12 bit digital LVDS outputs (serial) or one 10
bit parallel CMOS output. The image sensor also integrates a programmable gain amplifier and offset regulation. Each
LVDS channel runs at 480 Mbps maximum which results in 480 fps frame rate at full resolution. Higher frame rates can
be achieved in row-windowing mode or row-subsampling mode. These modes are all programmable using the SPI
interface. All internal exposure and read out timings are generated by a programmable on-board sequencer. External
triggering and exposure programming is also possible. Extended optical dynamic range can be achieved by multiple
integrated high dynamic range modes.
1.2 FEATURES
 648 * 488 active pixels on a 7.4µm pitch
 8 Dark reference and dummy rows and columns
 Frame rate 480 frames/sec @ 640 * 480 resolution
 Row windowing capability
 X-Y mirroring function
 Master clock: 10-40MHz
 4 LVDS-outputs @ 480Mbit/s (480 fps) multiplexable to 2 (240fps) and 1 (120 fps) outputs
 One 10 bit parallel CMOS output running at maximum 40 MHz (120 fps)
 LVDS control line with frame and line information
 LVDS DDR output clock to sample data on the receiving end
 12 bit ADC output at maximum frame rate
 Multiple High Dynamic Range modes supported
 On chip temperature sensor
 On chip timing generation
 On chip black reference
 SPI-control
 Chip scale package ( 8 x 8 BGA pins)
 3.3V and 2.2V signaling
 Available in panchromatic and Bayer (RGB)
1.3 SPECIFICATIONS
 Full well charge: 20Ke-
 Sensitivity: 6 V/lux.s (with microlenses)
 Dark noise: 20e- RMS
 Conversion factor: 0.2LSB/e- (12 bit mode) at recommended gain
 Dynamic range: 60 dB
 Extended dynamic range: piecewise linear response or interleaved read-out
 Parasitic light sensitivity: 1/50 000
 Dark current: 120 e/s (@ 25C die temperature)
 Fixed pattern noise: <4 LSB (12 bit mode, <0.1% of full swing, standard deviation on full image)
 Power consumption: 700mW



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