6402 datasheet(115/250 Pages) INTEL

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Intel® 6400/6402 Advanced Memory Buffer Datasheet

115

DDR MemBIST

Note:

Address register bit 15 “R” = Reserved for future use

11.3.2.2

Address Generation

The address generation logic and controlling register bits allow a variety of methods to

traverse the address space of the DRAM. These are described in the next sections.

In these explanations, the symbol X refers to the row address. Row address lines are

also called word lines. The symbol Y refers to the column address. Column address

lines are also called bit lines. The symbol Z refers to the bank address. The MemBIST

start address consists of a triple of row, bank, and column address (Xstart, Zstart, Ystart)

or (Xs, Zs, Ys) for brevity. Likewise, the end address consists of the triple (Xend, Zend,

Yend) or (Xe, Ze, Ye). The row, bank or column symbols may also be used individually to

refer to a value without being included in the address triple to which it belongs.

11.3.2.2.1

Address Sequencing Options

MemBIST provides several options to select the address space for MemBIST operation

and for sequencing through the address space chosen. Table 11-4 below shows how the

MemBIST addresses are generated based on various parameters that affect address

generation. Detailed explanations of the entries are found in later sections.

Table 11-3. Memory Address Definition, BL=8

Address register bit

31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9

15 14 13 12 11 10 98

765

432

R 15 14 13 12 11 9

876

543

210

Row

Column

Bank

6402 Datasheet(PDF) 115 Page - Intel Corporation