R5F36CAMNFB datasheet(54/100 Pages) RENESAS

54 / 100 page

R01DS0034EJ0210 Rev.2.10

Page 54 of 96

Jul 31, 2012

M16C/6C Group

5. Electrical Characteristics

Notes:

Definition of program and erase cycles

The program and erase cycles refer to the number of per-block erasures.

If the program and erase cycles are n (n = 10,000), each block can be erased n times.

For example, if a 4 KB block is erased after writing 2 word data 1,024 times, each to a different address, this

counts as one program and erase cycles. Data cannot be written to the same address more than once without

erasing the block (rewrite prohibited).

Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing

to sequential addresses in turn so that as much of the block as possible is used up before performing an erase

operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be

minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the

erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain

data on the erasure cycles of each block and limit the number of erase operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the

block erase command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.11

Flash Memory (Data Flash) Electrical Characteristics

VCC1 = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C

10,000 (2)

times

2 word program time

VCC1 = 3.3 V, Topr = 25°C

300

4000

μs

Lock bit program time

VCC1 = 3.3 V, Topr = 25°C

140

3000

μs

Block erase time

VCC1 = 3.3 V, Topr = 25°C

0.2

3.0

Program, erase voltage

2.7

5.5

Read voltage

2.7

5.5

Program, erase temperature

°C

tPS

Flash memory circuit stabilization wait time

μs

Data hold time (6)

Ambient temperature = 55

°C

year

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