TMDS181I datasheet(5/58 Pages) TI1

5 / 58 page

TMDS181, TMDS181I

www.ti.com

SLASE75A – AUGUST 2015 – REVISED OCTOBER 2015

Pin Functions(1) (continued)

TYPE(2)

DESCRIPTION

NAME

NO.

I2C data signal

SDA_CTL

I/0

Note: When I2C_EN = Low Pin strapping takes priority and those functions cannot be

changed by I2C

VSadj

TMDS-compliant voltage swing control nominal resistor to GND

High address bit 2 for I2C programming

Weak internal pull down

Note: When in Pin Strapping Mode leave pin as No connect

Transmit termination control

TX_TERM_CTL = H, no transmit termination

TX_TERM_CTL = L, transmit termination impedance in approximately 75 to 150

Ω

TX_TERM_CTL = No Connect, automatically selects the termination impedance

TX_TERM_CTL

3 level

Data rate (DR) > 3.4 Gbps – 75 to 150

Ω differential near end termination

2 Gbps > DR < 3.4 Gbps – 150 to 300

Ω differential near end termination

DR < 2 Gbps – no termination

Note: If left floating will be in automatic select mode.

Input lane SWAP and polarity control pin

SWAP/POL = H: receive lanes polarity swap (retimer mode only)

SWAP/POL

3 level

SWAP/POL = L: receive lanes swap (redriver and retimer mode)

SWAP/POL = No Connect: normal operation

18, 40

No connect

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

VCC

–0.3

Supply voltage(3)

VDD

–0.3

1.4

Main link input differential voltage (IN_Dx, IN_CLKx) IIN = 15mA

VCC - 0.75V

VCC + 0.3V

TMDS outputs ( OUT_Dx)

–0.3

Voltage

HPD_SRC, Vsadj, SDA_CTL, SCL_CTL, OE, A1, PRE_SEL, EQ_SEL/A0,

–0.3

I2C_EN/PIN, SIG_EN, TX_TERM_CTL,

HDP_SNK, SDA_SNK, SCL_SNK, SDA_SRC, SCL_SRC

–0.3

Input Current IIN

Main link input current (IN_Dx, IN_CLKx)

Continuous power dissipation

See Thermal Information

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential voltages, are with respect to network ground terminal.

(3)

Tested in accordance with JEDEC Standard 22, Test Method A114-B

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Electrostatic

V(ESD)

discharge

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

(1)

JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.

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