TMDS181I datasheet(7/58 Pages) TI1

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TMDS181, TMDS181I

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SLASE75A – AUGUST 2015 – REVISED OCTOBER 2015

6.4 Thermal Information

TMDS181x

THERMAL METRIC(1)(2)

RGZ (VQFN)

UNIT

48 PINS

RθJA

Junction-to-ambient thermal resistance

31.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

18.2

°C/W

RθJB

Junction-to-board thermal resistance

8.1

°C/W

ψJT

Junction-to-top characterization parameter

0.4

°C/W

ψJB

Junction-to-board characterization parameter

8.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

3.2

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

Test conditions for

ΨJB and ΨJT are clarified in the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Power Supply Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP(1)

MAX(2)

UNIT

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

Device power dissipation

IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern, VI =

PD1

(3) (4)

800

900

(retimer operation)

3.3 V, I2C_EN/PIN = L, PRE_SEL= NC, EQ_SEL= NC,

SDA_CTL/CLK_CTL = 0 V

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

Device power dissipation

IN_Dx: VID_PP = 1200 mV, 2.97 Gbps TMDS pattern, VI =

PD2

(3) (4)

500

600

(redriver operation)

3.3 V, I2C_EN/PIN = L, PRE_SEL= NC, EQ_SEL= H,

SDA_CTL/CLK_CTL = 0 V

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V, HPD =

PSD1

(3) (4)

Device power in standby

100

H, No valid input signal

Device power in power

PSD2

(3) (4)

OE = L, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

down

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

VCC supply current (TMDS

IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern

ICC1

(3) (4)

131

150

6Gpbs retimer mode)

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = NC,

SDA_CTL/CLK_CTL = 0 V

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

VDD supply current (TMDS

IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern

IDD1

(3) (4)

332

350

6Gpbs retimer mode)

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = NC,

SDA_CTL/CLK_CTL = 0 V

OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

VCC supply current (TMDS

IN_Dx: VID_PP = 1200 mV, 2.97 Gbps TMDS pattern

ICC2

(3) (4)

6Gpbs redriver mode)

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = H,

SDA_CTL/CLK_CTL = 0 V

OE = H, VCC= 3.3 V/3.465 V, VDD = 1.2 V/1.27 V

VDD supply current (TMDS

IN_Dx: VID_PP = 1200 mV, 3.4 Gbps TMDS pattern

IDD2

(3) (4)

187

6Gpbs redriver mode)

I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = H,

SDA_CTL/CLK_CTL = 0 V

OE = H, VCC = 3.3 V/3.465 V, VDD =

3.3 V rail(3)

ISD1

Standby current

1.2 V/1.27 V, HPD = H: No valid

1.2 V rail

signal on IN_CLK

3.3 V rail(3)

OE = L, VCC = 3.3 V/3.465 V, VDD =

ISD2

Power-down current

1.2 V/1.27 V

1.2 V rail

3.5

(1)

The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C temperature unless otherwise noted

(2)

The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C temperature unless otherwise noted

(3)

ICC is a direct result of the source design as the TMDS181x integrated receive termination resistor accounts for 85 to 110 mA.

(4)

IDD is impacted by ARC usage. Connecting a 500 kΩ resistor to GND at SPDIF reduces the value by more than 20 mA

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