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PC87591L Datasheet(PDF) 225 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # PC87591L
Description  LPC Mobile Embedded Controllers
PDF  437 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

PC87591L Datasheet(HTML) 225 Page - National Semiconductor (TI)

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Embedded Controller Modules (Continued)
Revision 1.07
225
www.national.com
Main Block Page Erase
Pages in the Main Block may be erased one at a time. The size of the pages are defined in Table 30 on page 221 and “Flash
Read, Write and Erase Time” on page 222. To enable erasing by the core or host, the page must be enabled for write.
1. Verify that the flash is not busy.
2. Prevent access to the flash while erase is in progress, if required.
3. Set the page erase bit.
4. Write to an address in the desired page.
5. Wait until the busy bit is cleared and check the error flags to see if the erase was successful.
6. To erase additional pages, repeat steps 3 through 5.
7. Clear the page erase bit to prevent accidental erase operations.
To erase a page using the JTAG interface, see Section 4.19.4 on page 251.
Information Block Page Erase
Pages in the Information Block may be erased one at a time. The size of the pages are defined in Table 30 on page 221 and
Table 31 on page 221. Note that the factory parameters and the protection information may not be updated by the core.
To erase a page using the JTAG interface, see Section 4.19.4 on page 251. Note that the Factory Parameters page may
not be erased by the JTAG interface.
Main Block Section Erase
Sections in the Main Block may be erased with a single erase operation. The size of the sections are defined in Table 30 on
page 221 and Table 31 on page 221. To enable an erase by the core, the entire section must be enabled for write. Note that
Host-initiated section erases are not allowed.
1. Verify that the flash is not busy.
2. Prevent access to the flash while erase is in progress, if required.
3. Set the section erase bit in the control register (SMER bit in FLCR register).
4. Write to an address in the desired section.
5. Wait until the busy bit is cleared and check the error flags to see if the erase was successful.
6. To erase additional sections, repeat steps 3 through 5.
7. Clear the section erase bit (SMER bit in FLCR register) to prevent accidental erase operation.
To erase a page using the JTAG interface, see Section 4.19.4 on page 251.
Main and Information Block Section Erase
Sections in the Main Block and Information Block may be erased simultaneously using a single erase operation. The size of
the sections are defined in Table 30 on page 221 and Table 31 on page 221. To erase a section using the JTAG interface,
see Section 4.19.4 on page 251.
Special Erase
This operation is enabled only for the JTAG interface. If the Flash Contents Protection bit is set, this operation should be
done to enable any other access to the flash (or to enable the Debugger interface functions).
To perform a special erase using the JTAG interface, see Section 4.19.4 on page 251.
Program the Main Block
The program operation enables changing bits with a value of 1 to 0. Each byte address of the Main Block may be programed
once before being erased. If required, perform an erase operation prior to the program operation. To program a byte in the
Main Block:
1. Verify that the flash is not busy.
2. Prevent access to the flash while the program operation is in progress, if required.
3. Set the program bit in the control register (PE bit in FLCR register).
4. Write to the byte or word that needs to be programed.
5. Wait until the busy bit is cleared and check the error flags to see if the program operation was successful.
6. To program additional bytes/words, repeat steps 3 through 5.
To program a byte or word using the JTAG interface, see Section 4.19.4 on page 251.



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