Si3050 datasheet(7/128 Pages) SILABS

7 / 128 page

Si3050 + Si3011/18/19

Rev. 1.5

Table 3. DC Characteristics, VD = 3.0 to 3.6 V

(VD = 3.0 to 3.6 V, TA = 0 to 70 °C)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

High Level Input Voltage1

VIH

2.0

—

Low Level Input Voltage1

VIL

——

0.8

High Level Output Voltage

VOH

IO =–2mA

2.4

—

Low Level Output Voltage

VOL

IO = 2 mA

—

0.35

AOUT High Level Voltage

VAH

IO =10mA

2.4

—

AOUT Low Level Voltage

VAL

IO =10mA

—

0.35

Input Leakage Current

–10

—

µA

Power Supply Current, Digital2

VD pin

—

8.5

Total Supply Current, Sleep Mode2

PDN = 1, PDL = 0

—

5.0

6.0

Total Supply Current, Deep Sleep2,3

PDN = 1, PDL = 1

—

1.3

1.5

Notes:

1. VIH/VIL do not apply to C1A/C2A.

2. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs are held static except clock and all outputs unloaded

(Static IOUT = 0mA).

3. RGDT is not functional in this state.

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