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LT8551 Datasheet(PDF) 5 Page - Analog Devices

Part # LT8551
Description  Multiphase Boost Converter Expander
PDF  32 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT8551 Datasheet(HTML) 5 Page - Analog Devices

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LT8551
5
Rev 0
For more information www.analog.com
ELECTRICAL CHARACTERISTICS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
REGSNS Pin Bias Current
REGSNS = 5V
12
µA
Gate Drivers
TG1, TG2, TG3, TG4 Rise Time
CLOAD = 3.3nF, SWx = 0V, BSTx = 5V (Note 4)
30
ns
TG1, TG2, TG3, TG4 Fall Time
CLOAD = 3.3nF, SWx = 0V, BSTx = 5V (Note 4)
20
ns
BG1, BG2, BG3, BG4 Rise Time
CLOAD = 3.3nF (Note 4)
50
ns
BG1, BG2, BG3, BG4 Fall Time
CLOAD = 3.3nF (Note 4)
27
ns
Bottom & Top Gate Non-Overlap Time
TG Falling to BG Rising, CLOAD = 3.3nF (Note 4)
BG Falling to TG Rising, CLOAD = 3.3nF (Note 4)
85
80
ns
ns
Bottom & Top Gate Minimum Off-Time
CLOAD = 3.3nF (Note 4)
140
ns
Primary Gate Sensing
BGSH Rising Threshold
l
4
V
BGSH Falling Threshold
l
1
V
BGSH Threshold Hysteresis
1.4
V
BGSH to BGBUF Delay
CLOAD = 220pF, Master LT8551 (Note 4)
45
ns
BGBUF Rise Time
CLOAD = 220pF, Master LT8551 (Note 4)
8
ns
BGBUF Fall Time
CLOAD = 220pF, Master LT8551 (Note 4)
6
ns
TGSH Rising Threshold
TGSR = 5V, TGSL = 0V
l
4
V
TGSH Falling Threshold
TGSR = 5V, TGSL = 0V
l
1
V
TGSH Threshold Hysteresis
1.4
V
TGSH to TGBUF Delay
CLOAD = 220pF, Master LT8551 (Note 4)
45
ns
TGBUF Rise Time
CLOAD = 220pF, Master LT8551 (Note 4)
8
ns
TGBUF Fall Time
CLOAD = 220pF, Master LT8551 (Note 4)
6
ns
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, REG = 5V, VCC = 5V, SHDN = High, unless otherwise noted.
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating Condition for extended periods may affect device
reliability and lifetime.
Note 2: Do not apply a positive or negative voltage or current source
to REGDRV, BG1, BG2, BG3, BG4, TG1, TG2, TG3 and TG4, otherwise
permanent damage may occur.
Note 3: The LT8551E is guaranteed to meet performance specifications
from 0°C to 125°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LT8551I is guaranteed to meet performance specifications from –40°C to
125°C junction temperature.
Note 4: Rise and fall times are measured using 10% and 90% levels. Delay
times are measured using 50% levels.
Note 5: Negative voltages on SW1/2/3/4 pins are limited, in an application,
by the body diodes of the external NMOS devices, or the parallel Schottky
diodes when present. The SW1/2/3/4 pins are tolerant of these negative
voltages in excess of one diode drop below ground, guaranteed by design.



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