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LT8551 Datasheet(PDF) 5 Page - Analog Devices |
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LT8551 Datasheet(HTML) 5 Page - Analog Devices |
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5 / 32 page ![]() LT8551 5 Rev 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS REGSNS Pin Bias Current REGSNS = 5V 12 µA Gate Drivers TG1, TG2, TG3, TG4 Rise Time CLOAD = 3.3nF, SWx = 0V, BSTx = 5V (Note 4) 30 ns TG1, TG2, TG3, TG4 Fall Time CLOAD = 3.3nF, SWx = 0V, BSTx = 5V (Note 4) 20 ns BG1, BG2, BG3, BG4 Rise Time CLOAD = 3.3nF (Note 4) 50 ns BG1, BG2, BG3, BG4 Fall Time CLOAD = 3.3nF (Note 4) 27 ns Bottom & Top Gate Non-Overlap Time TG Falling to BG Rising, CLOAD = 3.3nF (Note 4) BG Falling to TG Rising, CLOAD = 3.3nF (Note 4) 85 80 ns ns Bottom & Top Gate Minimum Off-Time CLOAD = 3.3nF (Note 4) 140 ns Primary Gate Sensing BGSH Rising Threshold l 4 V BGSH Falling Threshold l 1 V BGSH Threshold Hysteresis 1.4 V BGSH to BGBUF Delay CLOAD = 220pF, Master LT8551 (Note 4) 45 ns BGBUF Rise Time CLOAD = 220pF, Master LT8551 (Note 4) 8 ns BGBUF Fall Time CLOAD = 220pF, Master LT8551 (Note 4) 6 ns TGSH Rising Threshold TGSR = 5V, TGSL = 0V l 4 V TGSH Falling Threshold TGSR = 5V, TGSL = 0V l 1 V TGSH Threshold Hysteresis 1.4 V TGSH to TGBUF Delay CLOAD = 220pF, Master LT8551 (Note 4) 45 ns TGBUF Rise Time CLOAD = 220pF, Master LT8551 (Note 4) 8 ns TGBUF Fall Time CLOAD = 220pF, Master LT8551 (Note 4) 6 ns The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, REG = 5V, VCC = 5V, SHDN = High, unless otherwise noted. Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating Condition for extended periods may affect device reliability and lifetime. Note 2: Do not apply a positive or negative voltage or current source to REGDRV, BG1, BG2, BG3, BG4, TG1, TG2, TG3 and TG4, otherwise permanent damage may occur. Note 3: The LT8551E is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LT8551I is guaranteed to meet performance specifications from –40°C to 125°C junction temperature. Note 4: Rise and fall times are measured using 10% and 90% levels. Delay times are measured using 50% levels. Note 5: Negative voltages on SW1/2/3/4 pins are limited, in an application, by the body diodes of the external NMOS devices, or the parallel Schottky diodes when present. The SW1/2/3/4 pins are tolerant of these negative voltages in excess of one diode drop below ground, guaranteed by design. |
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