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HD404374FT Datasheet(PDF) 122 Page - Renesas Technology Corp |
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HD404374FT Datasheet(HTML) 122 Page - Renesas Technology Corp |
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122 / 161 page ![]() HD404374/HD404384/HD404389/HD404082/HD404084 Series Rev.5.00, Sep.11.2003, page 122 of 161 PROM Reliability after Programming: In general, semiconductor devices retain their reliability, provided that some initial defects can be excluded. These initial defects can be detected and rejected by screening. Baking devices under high-temperature conditions is one method of screening that can rapidly eliminate data-hold defects in memory cells. (Refer to the previous Principles of Programming/Erasure section.) ZTAT™ microcomputer devices are extremely reliable because they have been subjected to such a screening method during the wafer fabrication process, but Hitachi recommends that each device be exposed to 150°C at one atmosphere for at least 48 hours after it is programmed, to ensure its best performance. The recommended screening procedure is shown in figure 74. Note: If programming errors occur continuously during PROM programming, suspend programming and check for problems in the PROM programmer or socket adapter. If programming verification indicates errors in programming or after high-temperature exposure, please inform Renesas Technology. Programming, verification Exposure to high temperature, without power 150˚C ± 10˚C, 48 h +8h* −0h Program read check VCC = 4.5 V or 5.5 V Note: * Exposure time is measured from when the temperature in the heater reaches 150˚C. Figure 74 Recommended Screening Procedure Programming percentage: Programming percentage is guarenteed to more than 95%. |
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