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33905 Datasheet(PDF) 21 Page - Freescale Semiconductor, Inc |
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33905 Datasheet(HTML) 21 Page - Freescale Semiconductor, Inc |
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21 / 91 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 21 33904/5 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 5. Dynamic Electrical Characteristics Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 27 V, -40°C ≤ TA ≤ 125°C, GND = 0 V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit SPI TIMING SPI operation frequency (MISO cap = 50 pF) FREQ 0.25 - 4.0 MHz SCLK Clock Period tPCLK 250 - N/A ns SCLK Clock High Time tWSCLKH 125 - N/A ns SCLK Clock Low Time tWSCLKL 125 - N/A ns Falling Edge of CS to Rising Edge of SCLK tLEAD 30 - N/A ns Falling Edge of SCLK to Rising Edge of CS tLAG 30 - N/A ns MOSI to Falling Edge of SCLK tSISU 30 - N/A ns Falling Edge of SCLK to MOSI tSIH 30 - N/A ns MISO Rise Time (CL = 50 pF) tRSO - - 30 ns MISO Fall Time (CL = 50 pF) tFSO - - 30 ns Time from Falling to MISO Low-impedance Time from Rising to MISO High-impedance tSOEN tSODIS - - - - 30 30 ns Time from Rising Edge of SCLK to MISO Data Valid tVALID - - 30 ns Delay between rising and falling edge on CS D2CS 1.0 - - μs CS low timeout detection CS-TO 2.5 - - ms SUPPLY, VOLTAGE REGULATOR, RESET VSUP under-voltage detector threshold deglitcher VS_LOW1/ 2_DGLT 30 50 100 μs Rise time at turn ON. VDD from 1.0 to 4.5 μV. 2.2 μF at VDD pin. tRISE-ON 50 250 800 μs Deglitcher time to set reset pin low RST-DGLT 20 30 40 μs RESET PULSE DURATION VDD under-voltage (SPI selectable) short, default at power on when BATFAIL bit set medium medium long long RST-PULSE 0.9 4.0 8.5 17 1.0 5.0 10 20 1.4 6 12 24 ms Watchdog reset RST-WD 0.9 1.0 1.4 ms VSENSE INPUT Under-voltage deglitcher time BFT 30 - 100 μs INTERRUPT INT pulse duration (refer to SPI for selection. Guaranteed by design) short long INT-PULSE 20 90 25 100 35 130 μs |
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