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ADT7516 Datasheet(PDF) 26 Page - Analog Devices |
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ADT7516 Datasheet(HTML) 26 Page - Analog Devices |
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26 / 44 page ![]() ADT7516/ADT7517/ADT7519 Rev. B | Page 26 of 44 Table 8. VDD Data Format (VREF = 2.28 V) Digital Output VDD Value (V) Binary Hex 2.7 01 1000 1011 18B 3 01 1011 0111 1B7 3.5 10 0000 0000 200 4 10 0100 1001 249 4.5 10 1001 0010 292 5 10 1101 1100 2DC 5.5 11 0010 0101 325 6 11 0110 1110 36E 6.5 11 1011 0111 3B7 7 11 1111 1111 3FF On-Chip Reference The ADT7516/ADT7517/ADT7519 have an on-chip 1.2 V band gap reference that is gained up by a switched capacitor amplifier to give an output of 2.28 V. The amplifier is powered up for the duration of the device monitoring phase and is powered down once monitoring is disabled. This saves on current consumption. The internal reference is used as the reference for the ADC. The ADC is used for measuring VDD, internal temperature sensor, external temperature sensor, and AIN inputs. The internal reference is always used when measuring VDD, and the internal and external temperature sensors. The external reference is the default power-up reference for the DACs. Round Robin Measurement On power-up, the ADT7516/ADT7517/ADT7519 go into round robin mode, but monitoring is disabled. Setting Bit C0 of the Control Configuration 1 register to 1 enables conversions. It sequences through all the available channels, taking a measurement from each in the following order: VDD, internal temperature sensor, external temperature sensor (AIN1 and AIN2), AIN3, and AIN4. Pin 7 and Pin 8 can be configured to be either external temperature sensor pins or standalone analog input pins. Once conversion is completed on the AIN4 channel, the device loops around for another measurement cycle. This method of taking a measurement on all the channels in one cycle is called round robin. Setting Bit C4 of Control Configuration 2 (Address 0x19) disables the round robin mode and in turn sets up the single-channel mode. In single-channel mode, only one channel (for example, the internal temperature sensor) is measured in each conversion cycle. The time taken to monitor all channels is normally not of interest, because the most recently measured value can be read at any time. For applications where the round robin time is important, typical times at 25°C are given in the Specifications section. Single Channel Measurement Setting C4 of the Control Configuration 2 register enables the single channel mode and allows the ADT7516/ADT7517/ ADT7519 to focus on one channel only. A channel is selected by writing to Bits[C0:C2] in the Control Configuration 2 register. For example, to select the VDD channel for monitoring, write to the Control Configuration 2 register and set C4 to 1 (if not done so already), then write all 0s to Bits[C0:C2]. All subsequent conversions are done on the VDD channel only. To change the channel selection to the internal temperature channel, write to the Control Configuration 2 register and set C0 = 1. When measuring in single channel mode, conversions on the channel selected occur directly after each other. Any communication to the ADT7516/ADT7517/ADT7519 stops the conversions, but they are restarted once the read or write operation is completed. Temperature Measurement Method Internal Temperature Measurement The ADT7516/ADT7517/ADT7519 contain an on-chip band gap temperature sensor whose output is digitized by the on-chip ADC. The temperature data is stored in the internal temperature value register. Because both positive and negative temperatures can be measured, the temperature data is stored in twos comple- ment format, as shown in Table 9. The thermal characteristics of the measurement sensor can change and, therefore, an offset is added to the measured value to enable the transfer function to match the thermal characteristics. This offset is added before the temperature data is stored. The offset value used is stored in the internal temperature offset register. External Temperature Measurement The ADT7516/ADT7517/ADT7519 can measure the temperature of one external diode sensor or diode-connected transistor. The forward voltage of a diode or diode connected transistor, operated at a constant current, exhibits a negative temperature coefficient of about −2 mV/°C. Unfortunately, because the absolute value of VBE varies from device to device, and individual calibration is required to null this out, the technique is unsuitable for mass production. The technique used in the ADT7516/ADT7517/ADT7519 is to measure the change in VBE when the device is operated at two different currents. This is given by ΔVBE = kT/q × ln(N) where: k is Boltzmann’s constant. q is the charge on the carrier. T is the absolute temperature in kelvins. N is the ratio of the two currents. Figure 45 shows the input signal conditioning used to measure the output of an external temperature sensor. This figure shows the external sensor as a substrate transistor, provided for temperature monitoring on some microprocessors, but it can equally well be a discrete transistor. If a discrete transistor is used, the collector is not grounded, and should be linked to the base. If a PNP transistor is used, the base is connected to the D− input and the emitter to the D+ |
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