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RF112 Datasheet(PDF) 18 Page - NXP Semiconductors |
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RF112 Datasheet(HTML) 18 Page - NXP Semiconductors |
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18 / 45 page ![]() Table 4. Receiver specification (continued) Parameter Conditions Min Typ Max Unit 4900 MHz, ChBW: 20/40 MHz, PVT -40 -36 dB 4900 MHz, ChBW: 80 MHz, PVT -39 -36 dB 5300 MHz, ChBW: 20/40 MHz, PVT -39 -36 dB 5300 MHz, ChBW: 80 MHz, PVT -38 -36 dB 6000 MHz, ChBW: 20/40 MHz, PVT -38 -36 dB 6000 MHz, ChBW: 80 MHz, PVT -37 -36 dB 2400-2500 MHz, ChBW: 20/40 MHz, PVT -39 -36 dB Room temperature (RT), TJ ≈ 50 ° C 4900 MHz, ChBW: 20/40 MHz, PV -38 dB 4900 MHz, ChBW: 80 MHz, PV -37 dB 5300 MHz, ChBW: 20/40 MHz, PV -38 dB 5300 MHz, ChBW: 80 MHz, PV -37 dB 6000 MHz, ChBW: 20/40 MHz, PV -38 dB 6000 MHz, ChBW: 80 MHz, PV -36 dB Gain specification RX total gain Gain into 100 Ω load. Minimum, HB 5.5 dB Maximum, HB 61.5 dB Minimum, LB 2 dB Maximum, LB 65 dB RX gain variation Over temperature. For all gain settings HB -4 +4 dB LB -4 +4 dB RX RF gain control range HB 38 dB LB 41 dB RX RF gain flatness Max-Min; over frequency. HB 2.5 dB LB 1 dB RX BB gain control range 30 dB Table continues on the next page... Electrical characteristics RF112 Transceiver Data Sheet, Rev. 1 Draft B, 05/2024 18 NXP Semiconductors |
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