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RF112 Datasheet(PDF) 20 Page - NXP Semiconductors

Part # RF112
Description  RF112 Transceiver Data Sheet
PDF  45 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

RF112 Datasheet(HTML) 20 Page - NXP Semiconductors

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Table 4. Receiver specification (continued)
Parameter
Conditions
Min
Typ
Max
Unit
Resolution of RX
DC offset comp. at
output
Maximum
baseband gain
± 5
mV
DC offset at output
after calibration
Maximum gain
Measurement
bandwidth ≤ 10 kHz
-50
50
mV
Rx image rejection
ratio
Uncalibrated
25
dB
RSSI
RSSI thresholds
referred to the 1dB compression point (CP1dB)
High threshold
-6
dBc
Middle threshold
-15
dBc
Low threshold
-24
dBc
RSSI accuracy
+/-3.2
dB
RSSI sample rate
Configurable
10/20
MSps
General
EVM degradation
due to Rx spurious
signal
Degradation
compared to
neighboring
channel.
RF level chosen to
give -30dB EVM
with maximum gain
for neighboring
channel.
40 MHz channel
bandwidth.
3
dB
Rx RF pin isolation See Table 6
3.4 Transmitter specification
The transmitter consists of a high band and a low band RF chain with shared baseband
reconstruction filter, see figure below.
A fifth order Butterworth reconstruction filter suppresses the DAC alias signals, the filter
bandwidth needs to be calibrated by the baseband chip. The baseband signal is then up-
converted and amplified. The LO leakage depends on the DC offset and needs to be
minimized by DC offset compensation of the digital signal in the baseband. The TX gain
can be adjusted at several places and most of the gain control is done at RF to ensure that
the LO leakage remains low for all output power levels.
Electrical characteristics
RF112 Transceiver Data Sheet, Rev. 1 Draft B, 05/2024
20
NXP Semiconductors



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