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PGA280

SBOS487B – JUNE 2009 – REVISED MARCH 2020

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(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

Terminals are diode-clamped to the power-supply (VON and VOP) rails. Signals that can swing more than 0.5V beyond the supply rails

must be current-limited.

(3)

Short-circuit to VSON or VSOP, respectively, DGND or DVDD.

6 Specifications

6.1

Absolute Maximum Ratings

(1)

Over operating free-air temperature range, unless otherwise noted.

VALUE

UNIT

Supply voltage

VSN to VSP

40

V

VSON to VSOP, and DGND to DVDD

6

V

Signal input terminals, voltage(2)

VSN – 0.5 to VSP + 0.5

V

Signal input terminals, current(2)

±10

mA

Output short-circuit(3)

Continuous

Operating temperature

–55 to +140

°C

Storage temperature

–65 to +150

°C

Junction temperature

+150

°C

ESD ratings

Human body model (HBM)

2000

V

(1)

RTI: Referred to input.

(2)

Specified by design; not production tested.

(3)

See Application Information section and typical characteristic graphs.

(4)

300-hour life test at +150°C demonstrated randomly distributed variation in the range of measurement limits.

6.2 Electrical Characteristics

at TA = 25°C, VSP = 15 V, VSN = –15 V, VSON = 0 V, VSOP = 5 V, DVDD = 3 V, DGND = 0 V, RL = 2.5 kΩ to VSOP/2 =

VOCM, G = 1 V/V, using internal clock, BUF inactive, VCM = 0 V, and differential input and output (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOS

Offset voltage, RTI(1)

Gain = 1 V/V, 1.375 V/V

±50

±250

µV

Gain = 128 V/V

±3

±15

dVOS/dT

vs temperature(2)

TA = –40°C to +105°C

Gain = 1 V/V

±0.2

±0.6

μV/°C

Gain = 128 V/V

±0.03

±0.17

PSR

vs power supply, RTI

VSP – VSN = 10 V and 36 V,

gain = 1 V/V, 128 V/V

±0.3

±3

µV/V

dVOS/df

vs external clock, RTI(3)

0.8 MHz to 1.2 MHz, gain = 1 V/V

±0.05

μV/kHz

0.8 MHz to 1.2 MHz, gain = 128 V/V

±0.001

Long-term stability(4)

Gain = 128 V/V

3.5

nV/month

Input impedance

Single-ended and differential

> 1

G

Ω

Input capacitance, IN1 / IN2

Single-ended

12 / 8

pF

Input voltage

Gain = 1 V/V, gain = 128 V/V, TA = –40°C to +105°C

(VSN) + 2.5

(VSP) – 2.5

V

CMR

Common-mode rejection, RTI

Gain = 1 V/V

±0.3

±3

μV/V

Gain = 128 V/V

±0.08

±0.8

Gain = 128 V/V, TA = –40°C to +105°C

±0.1

±1.5

SINGLE-ENDED OUTPUT CONNECTION

VOS

Offset voltage, RTI, SE out

Gain = 1 V/V, 1.375 V/V, SE

±120

μV

Gain = 1V/V

±3

dVOS/dT

vs temperature, SE out

Gain = 1 V/V, SE, TA = –40°C to +105°C

0.6

μV/°C

Gain = 64 V/V, SE, TA = –40°C to +105°C

0.05