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ISOTMP35RDFPR Datasheet(PDF) 6 Page - Texas Instruments

Part # ISOTMP35RDFPR
Description  ISOTMP35R ±2.0°C, 5kVRMS Reinforced Isolated, Analog Temperature Sensor (10mV/°C) With Fast Response Time (< 4s) and 1.06kVRMS Working Voltage
PDF  44 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

ISOTMP35RDFPR Datasheet(HTML) 6 Page - Texas Instruments

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6 Specifications
6.1 Absolute Maximum Ratings
Over free-air temperature range unless otherwise noted(1)
MIN
MAX
UNIT
Supply voltage
VDD to GND
GND – 0.3
36
V
Output voltage
VOUT to GND
GND – 0.3
VDD + 0.3 (2)
V
Output current
IOUT
±10
mA
Temperature
Operating junction temperature, TJ
–60
155
°C
Storage temperature, Tstg
–65
155
°C
(1)
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2)
Maximum voltage must not exceed 36V
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2500
V
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)
±1000
(1)
JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VDD
Supply voltage
3.1
34
V
TA
Operating ambient temperature
–40
150
°C
6.4 Thermal Information
THERMAL METRIC(1)
ISOTMP35R
UNIT
DFP (SSOP)
12 PINS
RθJA
Junction-to-ambient thermal resistance
99.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
127.6
°C/W
RθJB
Junction-to-board thermal resistance
74.1
°C/W
ψJT
Junction-to-top characterization parameter
92.6
°C/W
ψJB
Junction-to-board characterization parameter
73.4
°C/W
MT
Thermal Mass
110
mJ/°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
note.
ISOTMP35R
SNIS244A – SEPTEMBER 2025 – REVISED MAY 2026
www.ti.com
6
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Copyright © 2026 Texas Instruments Incorporated
Product Folder Links: ISOTMP35R



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