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RZ/G3S Datasheet(PDF) 22 Page - Renesas Technology Corp |
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RZ/G3S Datasheet(HTML) 22 Page - Renesas Technology Corp |
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22 / 88 page ![]() RZ/G3S Group 3. Electrical Characteristics R01DS0489EJ0120 Rev.1.20 Page 22 of 88 May 29, 2026 3.4 DC Characteristics Table 3.3 DC Characteristics (1) [GP I/O (3.3 V)] Item Symbol Min. Typ. Max. Unit Remarks High-level input voltage VIH 2 — — V Low-level input voltage VIL — — 0.8 V Hysteresis threshold ↑ VT+ 2.1 — — V Hysteresis threshold ↓ VT − — — 0.7 V Output logic high voltage (IOH = –1.9 mA) VOH VCCQ – 0.4 — — V (IOH = –4 mA) (IOH = –8 mA) (IOH = –9 mA) Output logic low voltage (IOL = 1.9 mA) VOL — — 0.4 V (IOL = 4 mA) (IOL = 8 mA) (IOL = 9 mA) Weak pull-up resistor (input mode) RUP 10 K 50 K 90 K Ω Weak pull-down resistor (input mode) RDN 10 K 50 K 90 K Ω Input leakage current ILI — — 10 µA 0V ≤ V in ≤ PV DD33 In case of 3state buffer, the leak current when output mode OFF Note: Vin means input voltage of external input pin. |
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